Method for manufacturing semiconductor element

Abstract

The invention discloses a method for manufacturing a semiconductor element. The method comprises the following steps of forming a groove in a substrate, forming a first oxide layer in the groove, thenforming a silicon layer on the first oxide layer, performing an oxidation manufacturing process to convert the silicon layer into a second oxide layer, and planarizing the second oxide layer and thefirst oxide layer to form shallow trench isolation.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor element, in particular to a method for manufacturing a Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM) element. Background technique [0002] With the trend of miniaturization of various electronic products, the design of dynamic random access memory (DRAM) cells must also meet the requirements of high integration and high density. For a DRAM cell with a recessed gate structure, since it can obtain a longer carrier channel length in the same semiconductor substrate to reduce the leakage of the capacitor structure, it is under the current mainstream development trend , which has gradually replaced DRAM cells with only planar gate structures. [0003] Generally, a DRAM cell with a recessed gate structure includes a transistor element and a charge storage device for receiving voltage signals from bit lines and word lines. However, due to the limitation of manufacturing...

AI Technical Summary

Problems solved by technology

However, limited by the manufacturing process technology, there are still many defects in the existing DRAM cells with recessed gate structures, which need to be further improved to effectively improve the performance and reliability of related memory components

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