Preparation method of black silicon substrate with ultra-low reflectivity micro-nano composite structure
A technology of micro-nano composite structure and reflectivity, which can be used in final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc., can solve the problems of high surface reflectivity and low solar cell efficiency, and achieve low surface reflectivity and high efficiency Preparation, effect of excellent light-harvesting ability
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specific Embodiment approach 1
[0026] Specific Embodiment 1: In this embodiment, a method for preparing a black silicon substrate with an ultra-low reflectivity micro-nano composite structure is carried out according to the following steps:
[0027] 1. Use CuNO at a temperature of 40-100°C 3 , HF and H 2 o 2 The silicon substrate is etched with the mixed solution, and the etching time is controlled to be 1-60 minutes to obtain a silicon substrate with a micron-scale light-trapping structure on the surface;
[0028] 2. Put the silicon substrate obtained in step 1 into AgNO at a temperature of 20-100°C. 3 and HF mixed solution for the deposition of silver nanoparticles;
[0029] 3. Put the silicon substrate deposited in step 2 into HF and H at a temperature of 20-100°C. 2 o 2 In the mixed solution, etch for 10-60 minutes to obtain a silicon substrate with a micro-nano composite structure on the surface;
[0030] 4. Put the silicon substrate obtained in step 3 into HNO at a temperature of 20-100°C 3 Kee...
specific Embodiment approach 2
[0034] Specific embodiment two: the difference between this embodiment and specific embodiment one is that the CuNO described in step one 3 , HF and H 2 o 2 CuNO in mixed solution 3 The concentration of HF is 0.01~5.00mol / L, the concentration of HF is 1~10mol / L, the concentration of H 2 o 2 The concentration is 0.1~10mol / L. Others are the same as in the first embodiment.
[0035] In this embodiment, by controlling the concentration of the HF solution in step 1, the size, depth, occupation ratio and surface reflectance of the black silicon substrate of the obtained micron-scale light-trapping structure can be effectively regulated.
specific Embodiment approach 3
[0036] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: in step 1, the silicon substrate is (100) plane single crystal silicon. Others are the same as in the first or second embodiment.
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