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Wafer cleaning method

A wafer and cleaning solution technology, applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems that the wafer cleaning efficiency needs to be further improved, the wafer surface cleaning effect is not ideal, etc., and achieves ideal cleaning effect, Reasonable cleaning method and improved cleaning efficiency

Active Publication Date: 2020-02-07
江苏晶杰光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention provides a wafer cleaning method, which solves the problem that the cleaning effect of the wafer surface is not ideal, and the cleaning efficiency of the wafer needs to be further improved

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Embodiments of the present invention provide a method for cleaning a wafer, comprising the following steps:

[0023] S1. First place the wafer in a vacuum environment, and then irradiate the surface of the wafer with strong light. After irradiating for 5-10 minutes, turn off the light source, turn the wafer to the other side, and take it out after continuing to irradiate for 5-10 minutes. Light is irradiated on the wafer surface, which can increase the temperature of the wafer surface and change the activity of the wafer surface;

[0024] S2. Configure the wafer cleaning solution, place the wafer in the cleaning solution, first soak the wafer in the cleaning solution for 15-30 minutes, then use a brush to scrape the surface of the wafer, and repeatedly scrape for 3- Take it out after 5 times, then rinse the surface of the wafer with distilled water, and scrape the surface of the wafer as an automatic cleaning equipment, without manually cleaning the surface of the wafer...

Embodiment 2

[0029] Embodiments of the present invention provide a method for cleaning a wafer, comprising the following steps:

[0030] S1. First place the wafer in a vacuum environment, and then irradiate the surface of the wafer with strong light. After irradiating for 5-10 minutes, turn off the light source, turn the wafer to the other side, and continue to irradiate for 5-10 minutes before taking it out;

[0031] S2. Configure the wafer cleaning solution, place the wafer in the cleaning solution, first soak the wafer in the cleaning solution for 15-30 minutes, then use a brush to scrape the surface of the wafer, and repeatedly scrape for 3- Take it out after 5 times, and then use distilled water to rinse the surface of the wafer;

[0032] S3. Send the wafer into the vacuum box, set the rotating device in the vacuum box, and place the wafer in the rotating device to rotate. First, put an appropriate amount of nitrogen into the vacuum box, and the nitrogen in the vacuum box After the p...

Embodiment 3

[0036] Embodiments of the present invention provide a method for cleaning a wafer, comprising the following steps:

[0037] S1. First place the wafer in a vacuum environment, and then irradiate the surface of the wafer with strong light. After irradiating for 5-10 minutes, turn off the light source, turn the wafer to the other side, and continue to irradiate for 5-10 minutes before taking it out;

[0038] S2. Configure the wafer cleaning solution, place the wafer in the cleaning solution, first soak the wafer in the cleaning solution for 15-30 minutes, then use a brush to scrape the surface of the wafer, and repeatedly scrape for 3- Take it out after 5 times, and then use distilled water to rinse the surface of the wafer;

[0039] S3. Send the wafer into the vacuum box, set the rotating device in the vacuum box, and place the wafer in the rotating device to rotate. First, put an appropriate amount of nitrogen into the vacuum box, and the nitrogen in the vacuum box After the p...

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PUM

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Abstract

The invention provides a wafer cleaning method, and relates to the technical field of semiconductor cleaning. The wafer cleaning method comprises the following steps: S1, placing a wafer in a vacuum environment, irradiating the surface of the wafer with strong light, turning off a light source after irradiation for 5-10min, turning over the wafer to the other surface, continuing irradiating for 5-10min, and taking out the wafer; S2, preparing wafer cleaning liquid, placing the wafer in the cleaning liquid, soaking the wafer in the cleaning liquid for 15-30min, and scraping and brushing the surface of the wafer with a brush; and S3, sending the wafer into a vacuum box body, introducing water vapor into the vacuum box body, and turning off all equipment after 5-10min. Through the processes of irradiation with strong light, soaking in cleaning fluid, steam treatment, cleaning fluid spraying and the like, the surface of the wafer is very clean, the cleaning mode of the whole wafer is reasonable, the cleaning effect on the surface of the wafer is very ideal, and the cleaning efficiency of the wafer is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor cleaning, in particular to a wafer cleaning method. Background technique [0002] The raw material of the wafer is silicon, and there is inexhaustible silicon dioxide on the surface of the earth's crust. The silicon dioxide ore is refined by an electric arc furnace, chlorinated with hydrochloric acid, and distilled to produce high-purity polysilicon with a purity of 99.9%. %, the wafer manufacturing plant melts the polysilicon again, and then plants the seed crystal in the melt, and then slowly pulls it out to form a cylindrical single crystal silicon rod, because the silicon crystal rod is composed of a crystal Seed crystals with a defined plane orientation are gradually formed in the molten silicon raw material. This process is called "grown crystals". can become the final wafer. [0003] During the wafer manufacturing process, in order to form a good etching profile, it is necessary to ...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02057
Inventor 闫一方
Owner 江苏晶杰光电科技有限公司