Photovoltaic converter with multilayer quantum medium
A converter and photovoltaic technology, applied in photovoltaic power generation, nano optics, semiconductor devices, etc., can solve the problem that the redistribution of elastic strain has not yet been carried out, and achieve the effect of optimizing the characteristics of the active area
Inactive Publication Date: 2020-02-07
桑尼道特(南京)电子科技有限公司 +1
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However, optimizing the redistribution of elastic strain in QWD media has not yet been performed
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[0026] The present invention will be described in detail below in conjunction with the embodiments and the accompanying drawings. It should be noted that the described embodiments are only intended to facilitate the understanding of the present invention, rather than limiting it in any way.
[0027]In one embodiment, the photovoltaic converter represents a single-junction GaAs-based solar cell whose light absorption is enhanced by InGaAs quantum well dots. In this case, the base layer 12, the undoped layer 13 and the emitter layer 14 are all GaAs, the material of the quantum well point 14 is InGaAs, the nominal mole fraction is about 40% and the nominal thickness is about 8 molecular layers, and the quantum medium has There are 20 quantum well dot layers, and the thickness of the spacer layer 15 is 40nm. This device provides 31.4mA / cm 2 photocurrent and an open circuit voltage of 0.784V ( image 3 ).
[0028] In another embodiment, the photovoltaic converter represents an i...
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The invention provides a photovoltaic converter consisting of a multilayer quantum medium with the optimized layer number. The medium comprises a plurality of layers of quantum dot well composite semiconductor stack structures separated by separation layers with the optimized thickness. The thickness of the separation layers is optimized, so that each of photo-generated voltage and photo-generatedlight current is respectively increased by 20 percent. The photovoltaic converter with the multilayer quantum medium comprises a semiconductor substrate 11, wherein the following layers including anundoped semiconductor layer 13 and a p type doped semiconductor emission layer 16 are sequentially arranged on the semiconductor substrate 11, wherein the undoped semiconductor layer 13 comprises themultilayer quantum medium consisting of a series of quantum dot well layers 14 and the separation layers 15. The thickness of the separation layers 15 is optimized, and is enabled to be in a range of35 to 45 nm, so that the light current and the voltage of the photovoltaic converter are respectively increased by 20 percent.
Description
technical field [0001] The invention relates to a semiconductor optoelectronic device, which can convert optical signals and electrical signals, more specifically, a photovoltaic converter and a photodiode, which can be used in the fields of solar energy, optical sensors, optical data processing, and optical communications. Background technique [0002] Quantum-scale heterojunctions are widely used in the field of modern light-emitting and photovoltaic semiconductor devices. This heterojunction is based on the principle of lattice mismatch between quantum-scale materials and surrounding materials. Currently, devices based on quantum wells (QWs) and quantum dots (QDs) are most practically used. One advantage of devices based on strained QWs and QDs is the ability to absorb and emit light at longer wavelengths compared to devices based on bulk materials. In particular, the use of InGaAs QWs and InAs QDs has made it possible to fabricate photovoltaic converters (PCs) with edge...
Claims
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Login to View More IPC IPC(8): H01L31/0352H01L31/0304B82Y20/00
CPCB82Y20/00H01L31/03046H01L31/035236Y02E10/544
Inventor 阿列克谢·朱可夫米哈伊尔·马克西莫夫阿列克谢·纳多奇伊尼古拉·卡卢日尼谢尔盖·明塔洛夫
Owner 桑尼道特(南京)电子科技有限公司