Selection of epitaxial growth strain measurement method and quantum well laser fabrication method and quantum well laser

Abstract

The invention discloses a selective epitaxial growth strain measurement method which comprises the following steps: 1) forming a mask on a substrate, and selecting epitaxial growth materials on the substrate with the mask; 2) removing all the epitaxial materials outside the selected epitaxial growth region, removing the mask material and leaving only the material of the selected epitaxial growth region; and 3) measuring the strain of the material on the substrate, wherein the measured strain is the strain of the material in the selected epitaxial region. Meanwhile, the invention also providesa selective epitaxial growth quantum well laser manufacturing method using the method and a quantum well laser. The method can accurately measure the strain change caused by selective epitaxy, thus providing a low-cost and accurate method for characterization of the selective epitaxial growth materials, and the performance of the manufactured quantum well laser is good.

Description

technical field [0001] The invention relates to the field of information optoelectronics, in particular to a MOCVD selective epitaxial growth strain measurement method, a selective epitaxial growth quantum well laser manufacturing method and a quantum well laser. Background technique [0002] Semiconductor lasers for optical communications are generally prepared on IIIV compound semiconductor substrates such as InP or GaAs. In order to integrate more functional devices such as modulators, mode spot converters, passive waveguides, etc., with lasers, it is necessary to prepare on the substrate For materials with different bandgap wavelengths, the methods used include selective epitaxial growth, butt coupling growth, and mutual bonding of materials with different bandgap wavelengths. In selective epitaxial growth, masks of different shapes and sizes are generally formed on the current substrate. The area covered by the mask has no epitaxial material deposition, and the area not...

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Problems solved by technology

Since lasers, modulators, etc. are all produced in the selective epitaxial growth region, the change of strain will seriously affect the performance of the laser. Therefore, a method for accurately measuring the strain of the selective epitaxial growth region is needed. Since the width of the selective epitaxial growth region is generally tens of microns, The traditional method is generally micro-area X-ray diffraction [Shigeru Kimura, et al., Jpn. J. Appl. Phys., Part2, vol.41, No.9A / B, 2002], by reducing the X-ray spot to The tens of micron scale and the spot is accurately irradiated to the selected epitaxial growth area, which can accurately measure the strain and composition of the material in the selected epitaxial area. However, this method requires sophisticated and expensive X-ray diffraction equipment. Ordinary X-ray diffraction The method can accurately measure the strain, but the X-ray spot is too large, far exceeding the size of the selected epitaxial growth area, so the ordinary X-ray measures the average strain and composition of the selected epitaxial area and the non-selective epitaxial area, resulting in inaccurate measurement. precise

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