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Method for controlling bubble through temperature to strip two-dimensional material growing on sapphire substrate

A sapphire substrate and two-dimensional material technology, which is applied in the fields of analyzing materials, chemical instruments and methods, and material analysis using wave/particle radiation, can solve the uncertainty of high-temperature-resistant sapphire substrate process conditions and affect the transfer of finished products. Quality and quality stability, cannot well solve the problems of two-dimensional material transfer on the sapphire substrate, and achieve the effect of easy configuration, good scalability, and improved cleanliness

Active Publication Date: 2020-04-03
EAST CHINA NORMAL UNIV
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Problems solved by technology

However, these methods are not completely suitable for sapphire substrates with high temperature resistance and good electrical insulation, and there are uncertainties in the process conditions, which affect the quality and quality stability of the transferred products.
Therefore, the existing technology cannot well solve the transfer of two-dimensional materials on the sapphire substrate.

Method used

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  • Method for controlling bubble through temperature to strip two-dimensional material growing on sapphire substrate
  • Method for controlling bubble through temperature to strip two-dimensional material growing on sapphire substrate

Examples

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Embodiment 1

[0022] The two-dimensional material of this embodiment selects tungsten disulfide-molybdenum disulfide heterojunction, see figure 1 The specific preparation process is as follows:

[0023] Step 1: Take a sample of a two-dimensional material grown by vapor deposition on a sapphire substrate, such as figure 1 As shown in (a), set the rotation speed of the homogenizer 3, the forward rotation is 600 rpm, the time is 10 seconds; the backward rotation is 1200 rpm, the time is 60 seconds, and the sapphire substrate 1 is fixed on the homogenization machine by air pressure adsorption 3 on. Use the glue head dropper to take an appropriate amount of PMMA glue drop on the sample surface, cover two-thirds of the sample surface area, start the homogenizer 3, and form a PMMA film 4 with uniform thickness on the surface of the two-dimensional material growth area 2 to obtain a sapphire substrate -Two-dimensional material-PMMA film 7;

[0024] Step 2: Adjust the first heating stage 5 to 150°C, tra...

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Abstract

The invention discloses a method for controlling bubble through temperature to strip a two-dimensional material growing on a sapphire substrate. The method comprises the steps of heating the holes controlled by the two-dimensional material on the sapphire substrate with a high temperature to expand a gas therein, breaking through the chemical bond binding force of the two-dimensional material andthe sapphire substrate, and meanwhile, utilizing the bubbles of an aqueous solution of NH4OH and H2O2 to provide the traction force to separate a two-dimensional material-PMMA film from the sapphire substrate. The method provided by the invention has the advantages of simple operation, economy, high efficiency, better expansibility and the like, and can obtain a high-quality two-dimensional material sample.

Description

Technical field [0001] The invention relates to the technical field of nano material preparation and characterization, in particular to a method for transferring two-dimensional materials grown on a sapphire substrate. Background technique [0002] In the research and application requirements of two-dimensional materials, sapphire is often used as the substrate choice for large-scale preparation of two-dimensional materials. However, compared with traditional silicon dioxide substrates, it is very difficult to transfer two-dimensional materials grown on chemically inert sapphire substrates. The reason is that the bonding force between the sapphire substrate and the two-dimensional material is stronger than the van der Waals force, and the sapphire substrate has strong alkali etching resistance. The PMMA-sample bond cannot be combined with the traditional potassium hydroxide solution etchant. Separated from the sapphire substrate. In addition, compared with metal substrates such...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/2005C01B32/194
CPCC01B32/194G01N23/2005
Inventor 吴幸陈新倩徐何军
Owner EAST CHINA NORMAL UNIV
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