Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Ion source and plasma processing apparatus

An ion source and annular cavity technology, applied in the field of ion source, can solve the problem of high efficiency loss, achieve the effect of smooth circuit, reduce heat flux, and reduce collision loss

Pending Publication Date: 2020-04-07
CHANGXIN MEMORY TECH INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an ion source and plasma processing equipment, which solves the problem of excessive energy loss when the existing ion source generates plasma

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ion source and plasma processing apparatus
  • Ion source and plasma processing apparatus
  • Ion source and plasma processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0038] An embodiment of the present invention provides an ion source, which may also be referred to as an ion generator, an ion generator or an ion source generator, for generating plasma. The plasma referred to in the present invention is an ionized gas-like substance composed of atoms deprived of some electrons and positive and negative electrons generated after the atoms are ionized. The plasma generated by the ion source ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an ion source and plasma processing equipment. The ion source comprises a reaction cavity comprising an annular cavity, the annular cavity is provided with an air inlet pipe andan air outlet pipe, the radial section of the inner wall of the annular cavity is circular, the radial sections of the inner walls of the air inlet pipe and the air outlet pipe are oval, and the inner walls of the air inlet pipe, the air outlet pipe and the annular cavity are in smooth transition. An annular magnetic core surrounds the annular cavity and is connected with a radio frequency powersupply. According to the ion source, edges and corners of the inner wall of the cavity are eliminated, a smooth annular generation loop without edges and corners is provided for plasmas, smoothness ofa plasma loop can be guaranteed to the maximum extent, unnecessary collision loss and heat conduction are reduced, and the plasma benefit time is prolonged; and moreover, the heat flux of each part of the reaction cavity is reduced, and the efficiency loss is reduced.

Description

technical field [0001] The invention relates to the technical field of ion sources, in particular to an ion source and plasma processing equipment. Background technique [0002] The ion source is a device that ionizes neutral atoms or molecules and draws an ion beam from it. It is an indispensable part of various types of ion accelerators, mass spectrometers, electromagnetic isotope separators, ion implanters, ion beam etching devices, ion thrusters, and neutral beam implanters in controlled fusion devices. [0003] The reaction chamber, which is essential in the ion source, is used to provide a space for the plasma to be generated. At present, some reaction chambers adopt ring design, refer to figure 1 , the ring magnetic core is wound on the ring reaction chamber to form a ring loop. However, there are too many edges and corners in the annular reaction chamber, and the gas will go through a lot of collisions during operation, which will easily cause efficiency loss, and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/08H01J37/30H01J37/317
CPCH01J37/08H01J37/3002H01J37/317
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com