Thin-film lithium niobate single-polarization waveguide and preparation method thereof

A technology of thin-film waveguide and lithium niobate, which is applied in the field of integrated photonics, can solve the problems of large-scale dense integration of lithium niobate single-polarization waveguide, complex process flow, etc., to improve mass production capacity, simplify process flow, and reduce cross-section effect of size

Active Publication Date: 2020-04-10
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the defects of the prior art, the object of the present invention is to provide a thin film lithium niobate single polarization waveguide and its preparation method, aiming to solve the problems that the existing lithium niobate single polarization waveguide is difficult to be integrated in a large scale and the process flow is relatively complicated

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  • Thin-film lithium niobate single-polarization waveguide and preparation method thereof
  • Thin-film lithium niobate single-polarization waveguide and preparation method thereof
  • Thin-film lithium niobate single-polarization waveguide and preparation method thereof

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Embodiment 1

[0033] Figure 1-2 Shown is a schematic structural view of the thin-film lithium niobate single-polarization waveguide of this embodiment. The thin-film lithium niobate single-polarization waveguide of this embodiment comprises a silicon nitride upper cladding layer 1, a thin-film lithium niobate waveguide core layer 2, a silicon dioxide lower cladding layer 3 and Quartz substrate 4. The main structure of this embodiment is an X-cut Y-pass thin-film lithium niobate ridge waveguide. Preferably, the entire single polarization optical circuit adopts the same single polarization waveguide design.

[0034] The ridge width W1 and etching depth H2 of the thin-film lithium niobate waveguide core layer are determined by FDE simulation, and the widths of the grooves on both sides of the waveguide are determined by FDTD simulation. The total thickness H1 of the lithium niobate thin film is a fixed value. When the width W1 and the etching depth H2 are smaller than their theoretical ma...

Embodiment 2

[0044] The structural schematic diagram of the thin-film lithium niobate single-polarization waveguide of this embodiment can still refer to Figure 1-2 . The thin-film lithium niobate single-polarization waveguide of this embodiment includes a silicon dioxide upper cladding layer, a thin-film lithium niobate ridge waveguide core layer, a silicon dioxide lower cladding layer, and a silicon substrate. The main structure of this embodiment is an X-cut Y-pass thin-film lithium niobate ridge waveguide.

[0045] The preparation method of the thin-film lithium niobate single-polarization ridge waveguide of this embodiment comprises the following steps:

[0046] S1. Prepare thin film lithium niobate on insulator (Lithium niobate on insulator, LNOI);

[0047] S2: Cover a layer of metal material with conventional EBE (Electron Beam Evaporation, EBE) on the lithium niobate film, and expose the groove-shaped areas on both sides of the ridge-shaped waveguide protrusion structure on the...

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Abstract

The invention discloses a thin-film lithium niobate single-polarization waveguide and a preparation method thereof, which belong to the field of integrated photonics. The thin-film lithium niobate single-polarization waveguide comprises an upper cladding, a lithium niobate thin film waveguide core layer, a lower cladding and a substrate layer from top to bottom, wherein the lithium niobate thin film waveguide core layer comprises a ridge-shaped waveguide and groove-shaped regions located on the two sides of the ridge-shaped waveguide; the width and the etching depth of the ridge-shaped waveguide are smaller than a cut-off value existing in a TM0 mode, and the TM0 mode in the ridge-shaped waveguide and a TE1 mode in the groove-shaped regions are subjected to cross coupling; and the width value of the groove-shaped regions enables the TE1 mode coupled from the TM0 mode in the ridge-shaped waveguide to the groove-shaped regions on the two sides to be coherent with the TM0 mode leaked to the groove-shaped regions. By optimizing geometric parameters of the micro-nano optical waveguide structure, the waveguide structure only supporting TE0 mode stable transmission is obtained. The thin-film lithium niobate single-polarization waveguide is high in light field limiting capacity, the integration degree of the device is improved, and the technological process is simplified.

Description

technical field [0001] The invention belongs to the field of integrated photonics, and more specifically relates to a thin-film lithium niobate single-polarization waveguide and a preparation method thereof. Background technique [0002] Microelectronics technology represented by VLSI has developed to a very high level. One of the directions to further improve the performance of integrated circuits is to introduce light with faster propagation speed and larger information capacity into integrated circuits to form optoelectronic integration. In the field of integrated photonics, the device used to process the polarization state is the key device that constitutes the polarization-dependent integrated optical circuit. The design of the single polarization waveguide is compatible with the design and process method of other integrated photonics devices. When all the waveguides of the integrated optical circuit adopt the single polarization waveguide design, the signal light of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/10G02B6/126G02B6/136
CPCG02B6/10G02B6/126G02B6/136G02B2006/1204G02B2006/12097G02B2006/12176
Inventor 夏金松刘宇恒曾成
Owner HUAZHONG UNIV OF SCI & TECH
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