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Anti-radiation hardening module-level circuit simulation test method

A technology of anti-radiation hardening and simulation testing, applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., can solve the problems affecting the overall level of microelectronics and backwardness, and achieve mature and perfect simulation technology and verification technology capabilities Effect

Active Publication Date: 2020-04-14
BEIJING MXTRONICS CORP +1
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AI Technical Summary

Problems solved by technology

Our country has not systematically carried out technical research on the digital design platform of integrated circuit radiation resistance reinforcement, and the research on the effect mechanism has always lagged behind the level of foreign technology by at least two generations. This situation will seriously affect the overall level of my country's aerospace models and weaponry microelectronics

Method used

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  • Anti-radiation hardening module-level circuit simulation test method
  • Anti-radiation hardening module-level circuit simulation test method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0050] Step 101: According to the standard module-level circuit design process, first define the function of the module to be designed, and analyze the standard circuit components required to complete the function module;

[0051] Step 102: Carry out invocation splicing of standard circuit components, design a special circuit structure or use reinforcement techniques such as MullerC unit, time-domain sampling technology, and changing transistor size to increase critical charge to complete the design of the entire module-level circuit;

[0052] Step 103: Carry out SPICE pre-simulation on the circuit, embed the single event radiation damage model into the netlist file, and then use the specified transient pulse current source to simulate the transient current generated when the high-energy particle is incident on the sensitive node, according to the circuit The response of the module after injecting current at different nodes can obtain the single event effect sensitive nodes and...

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Abstract

The invention discloses an anti-radiation hardening module-level circuit simulation test method. An existing commercial software simulation tool is combined with a user-defined development technology;existing radiation test data information is utilized to the greatest extent; single particle results of circuits with the same library unit structure and different functions are counted and distinguished, key factors and influence factors are defined, single particle estimation is conducted through a mathematical statistics method, the single particle estimation results are fed back to the commercial software simulation tool in a model variable mode, and thus the accuracy of the existing simulation tool is improved. According to the method, the links of anti-radiation hardening module-level circuit single particle sensitivity analysis, layout radiation hardening design rule checking and module-level circuit single particle soft error simulation verification are added on the basis of the original design process, and reference is provided for simulation verification of the anti-radiation hardening module-level circuit.

Description

technical field [0001] The invention relates to a simulation test method for a radiation-resistant hardened module-level circuit, which belongs to the technical field of integrated circuit simulation. Background technique [0002] With the continuous improvement of military microelectronics technology, radiation-resistant hardened integrated circuits are increasingly used in high-performance weapons and equipment, and the research on new theories and new methods of circuit radiation-resistant hardened design and evaluation verification is of great importance to the improvement of our country's weapons and equipment. The reliability in the radiation environment is of great significance. [0003] Over the years, European and American countries have made great progress in the fields of radiation damage mechanism, reinforcement technology and effect simulation method by using integrated circuit radiation resistance design reinforcement technology and radiation simulation technol...

Claims

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Application Information

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IPC IPC(8): G06F30/398
Inventor 于春青郑宏超李哲王亮岳素格李建成初飞彭惠薪武永俊毕潇赵旭穆里隆徐雷霈
Owner BEIJING MXTRONICS CORP
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