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High-Q-value bulk acoustic wave resonator

A bulk acoustic wave resonator and high-sound technology, applied in the field of microelectronics, can solve problems such as acoustic wave leakage, achieve the effect of improving Q value and reducing lateral leakage

Pending Publication Date: 2020-04-14
武汉敏声新技术有限公司
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  • Abstract
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Problems solved by technology

[0005] The invention provides a high-Q bulk acoustic wave resonator to solve the problem of lateral leakage of sound waves

Method used

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  • High-Q-value bulk acoustic wave resonator
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  • High-Q-value bulk acoustic wave resonator

Examples

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Embodiment Construction

[0026] A bulk acoustic wave resonator includes a substrate 1 , a piezoelectric stack structure, a high acoustic impedance annular raised structure 6 and a low acoustic impedance annular raised structure 7 . The piezoelectric stack structure includes a bottom electrode 3 formed on a substrate 1 , a piezoelectric layer 4 formed on the bottom electrode 3 , and a top electrode 5 formed on the piezoelectric layer 4 . A cavity 2 is provided between the substrate 1 and the bottom electrode 3 as an acoustic reflection structure, so that the sound waves propagating longitudinally are confined in the effective area. One or more high-acoustic-impedance annular raised structures 6, and one or more low-acoustic-impedance annular raised structures 7 surround the boundary of the top electrode 5, effectively reflecting sound waves propagating laterally, thereby improving the Q value of the resonator . Such as Figure 2a and Figure 2b As shown, the high acoustic impedance annular raised st...

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Abstract

Disclosed is a high Q-value bulk acoustic wave resonator, and the wave resonator comprises a substrate; a piezoelectric stack structure which is located on the substrate, wherein an acoustic reflection structure is arranged between the piezoelectric stack structure and the substrate; one or more high acoustic impedance annular convex structures; one or more low acoustic impedance annular convex structures; wherein the high-acoustic-impedance annular bulge structures and the low-acoustic-impedance annular bulge structures alternately surround the boundary of the piezoelectric stack structure top electrode. According to the invention, through arranging the multiple circles of annular projection structures on the boundary of the top electrode, the transverse leakage of sound waves can be effectively reduced, thereby improving the Q value of the bulk acoustic wave resonator.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a bulk acoustic wave resonator. Background technique [0002] With the rapid development of wireless communication, wireless signals are becoming more and more crowded, and new requirements such as integration, miniaturization, low power consumption, high performance, and low cost are put forward for filters working in the radio frequency band. Traditional surface acoustic wave filters will be increasingly unable to meet such standards due to limitations in frequency and power. Film Bulk Acoustic Resonator (FBAR) has gradually become a hot spot in the research of RF filters due to its characteristics of CMOS process compatibility, high quality factor (Q value), low loss, low temperature coefficient, and high power carrying capacity. [0003] Figure 1a is a cross-sectional view of a thin film bulk wave resonator in the prior art; Figure 1b It is a top view...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/19H03H9/02
CPCH03H9/19H03H9/02086
Inventor 孙成亮邹杨周杰蔡耀高超刘婕妤
Owner 武汉敏声新技术有限公司
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