Crystal growth prediction method and device

A technology of crystal growth and prediction methods, applied in neural learning methods, biological neural network models, chemical machine learning, etc., can solve problems such as large amount of calculation, long time consumption, and inability to perform online prediction

Pending Publication Date: 2020-04-17
SICC CO LTD
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present application provides a crystal growth prediction method and device to solve the problems of

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crystal growth prediction method and device
  • Crystal growth prediction method and device
  • Crystal growth prediction method and device

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0031] In order to make the objectives, technical solutions, and advantages of the present application clearer, the technical solutions of the present application will be described clearly and completely in conjunction with specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of this application.

[0032] figure 1 The flow chart of the crystal growth prediction method provided in the embodiment of this application specifically includes the following steps:

[0033] S101: Acquire several thermal field diagrams of crystal growth to be predicted.

[0034] In the embodiment of this application, when the server is performing crystal growth prediction, it can obtai...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a crystal growth prediction method and device, and is used for solving the problems that an existing prediction method is large in calculation amount, long in consumed time, and incapable of online prediction. The method comprises the following steps: acquiring a plurality of to-be-predicted crystal growth thermal field graphs; according to a pre-trained convolutional neural network model, extracting picture features of the to-be-predicted thermal field picture; according to the extracted picture features and a pre-trained long-term and short-term memory network model,predicting the picture features of a thermal field graph of crystal growth after a preset time; and obtaining one or more items selected from thermal field distribution data of crystal growth, crystalshape change data and crystal stress distribution data according to the picture characteristics of the thermal field diagram of crystal growth after the preset time period. According to the method, crystal growth prediction can be realized in a short time, and online prediction is realized.

Description

technical field [0001] The present application relates to the technical field of crystal growth, in particular to a crystal growth prediction method and device. Background technique [0002] Silicon carbide crystal has the advantages of high thermal conductivity, high critical breakdown electric field, low dielectric constant, and good chemical stability. It is considered to be an ideal semiconductor material for manufacturing optoelectronic devices and high-frequency and high-power devices. It is widely used in screen display , aerospace, high temperature radiation environment, oil exploration, automation, etc. [0003] Currently, crystal growth methods include physical vapor transport (Physical Vapor Transport, PVT), chemical vapor deposition (Chemical Vapor Deposition, CVD), solution growth, and the like. Taking the PVT used in the growth of silicon carbide crystals as an example, the temperature required for the growth of silicon carbide crystals is usually as high as s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G16C20/10G16C20/70G06N3/04G06N3/08
CPCG16C20/10G16C20/70G06N3/08G06N3/044G06N3/045
Inventor 舒天宇王雅儒赵爱梅刘圆圆潘亚妮
Owner SICC CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap