Preparation method of micro-nano through hole, and structure with micro-nano through hole

Abstract

The invention provides a preparation method of a micro-nano through hole. The preparation method comprises the following steps: providing a substrate, sequentially forming a laminated layer of a structural layer and a sacrificial layer upwards from the top layer of the substrate to form a first structure with the sacrificial layer as the top layer; forming a plurality of discrete sacrificial regions based on the sacrificial layer on the top layer; forming side wall films on the top layers and the side walls of the sacrificial regions and the surface of a structure for bearing the sacrificial regions; removing parts of the side wall films, and reserving the side wall films of the side walls of the sacrificial regions to form a side wall; removing the sacrificial regions; removing the two ends of the side wall to form a plurality of independent wall bodies which are distributed at intervals; removing the structural layer and the sacrificial layer to the bottommost structural layer, and reserving the structural layer and the sacrificial layer below the wall body; filling a dielectric layer, and flattening to expose the top layer of the wall body; removing the dielectric layers at thetwo ends of the wall body to the top layer close to the substrate; and removing the sacrificial layer to form the through hole. The invention further discloses a structure with the micro-nano throughhole. The structure comprises the through hole formed by adopting the preparation method .

Description

technical field [0001] The invention relates to the technical field of micro-nano processing, in particular to a method for preparing micro-nano through-holes and a structure with micro-nano through-holes. Background technique [0002] Micron-scale or nano-scale through-holes (micro-nano through-holes) have very important practical application value, such as microfluidics, molecular sieves and virus sieves. [0003] Generally, photolithography and etching processes are used to prepare micron or nanometer through holes from top to bottom. The diameter of the formed through holes depends on photolithography and etching control. Therefore, photolithography and etching processes are used to form micron or nanometer There is a problem of inconsistency in the diameter of the through hole of the level. [0004] Moreover, before forming micron-scale or nanoscale through-holes by photolithography and etching processes, the bottom of the micron-scale or nanoscale holes is terminated ...

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Problems solved by technology

[0003] Generally, photolithography and etching processes are used to prepare micron or nanometer through holes from top to bottom. The diameter of the formed through holes depends on photolithography and etching control. Therefore, photolithography and etching processes are used to form micron or nanometer There is a problem of inconsistency in the diameter of the through hole of the level

[0004] Moreover, before forming micron-scale or nanoscale through-holes by photolithography and etching processes, the bottom of the micron-scale or nanoscale holes is terminated at the backside near the substrate, that is, the backside of the substrate needs to be reduced by chemical mechanical polishing. Thin to a certain thickness, and then use an etching solution to etch away the remaining substrate, and finally expose the micron or nanoscale holes. The chemical mechanical polishing process will have an adverse effect on the strength of the substrate and through holes

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