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Preparation method of graphene film

A graphene film and metal substrate technology, applied in the field of graphene film preparation, can solve problems such as difficulty in controlling the thickness of the graphene film, uneven thickness of the graphene film, and inability to mass-produce, and achieves low production cost, short time, The effect of uniform thickness

Inactive Publication Date: 2014-01-15
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the main problem encountered in the process of using graphene is that it cannot be mass-produced at present
[0003] The method for preparing graphene thin film mainly is to use chemical vapor deposition method at present, although the graphene thin film prepared by this method is smooth, area is large, but this chemical vapor deposition method needs higher reaction temperature and longer reaction time, and efficiency is low, high production cost
In addition, it is difficult to control the thickness of the graphene film produced by the chemical vapor deposition method, resulting in uneven thickness of the graphene film produced

Method used

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preparation example Construction

[0013] The example of the present invention provides a method for preparing a graphene film with high efficiency, low energy consumption and uniform thickness. The preparation method technological process of this graphene thin film please refer to figure 1 , including the following steps:

[0014] S01. Carbon element implantation: In an oxygen-free environment, carbon elements are implanted into the surface of the metal substrate by ion implantation; wherein, the amount of ion implantation is 1×10 -6 ~1×10 -5 g / cm 2 , the injection energy is 800-1500eV;

[0015] S02. Preparation of a graphene film: after the metal substrate is cooled, corrode it with an etching solution to obtain a graphene film.

[0016] Specifically, in the above step S01, the oxygen-free environment is to inject carbon into the surface layer of the metal substrate under oxygen-free conditions, prevent the participation of oxygen, and improve the purity of the graphene film generated in subsequent steps....

Embodiment 1

[0027] S11. First soak the 50 μm nickel foil substrate in hydrochloric acid with a concentration of 0.5mol / L for 30 minutes to remove surface impurities, then use ethanol, acetone and deionized water to ultrasonically remove oil stains for 20 minutes in an ultrasonic cleaner, and then place in a vacuum Dry in a drying oven at 80°C for 5 minutes;

[0028] S12. Take out the substrate that has been dried through the steps, and put it into the ion implantation equipment. After sealing the equipment, nitrogen gas is introduced as a protective gas. Using the method of high-speed ion implantation, carbon elements are implanted into the surface layer of the nickel foil, and the ion implantation The amount is 3×10 -6 g / cm 2 , the injection time is 5 minutes, and the injection energy is 800eV;

[0029] S13. After the ion implantation in step S12 is completed, start the cooling water circulation system to accelerate the cooling rate of the nickel foil. After the nickel foil is cooled t...

Embodiment 2

[0033]S21. First soak the 65 μm nickel foil substrate in nitric acid with a concentration of 1mol / L for 30 minutes to remove surface impurities, then use ethanol, acetone and deionized water to ultrasonically remove oil stains for 20 minutes in an ultrasonic cleaner, and then place it in vacuum drying Oven drying at 80°C for 8 minutes;

[0034] S22. Take out the substrate that has been dried through the steps, put it into the ion implantation equipment, seal the equipment and pass in argon as a protective gas, and use the high-speed ion implantation method to implant carbon elements into the surface of the nickel foil. The amount injected is 1×10 -6 g / cm 2 , the injection time is 20 minutes, and the injection energy is 1500eV;

[0035] S23. After the ion implantation in step S12 is completed, start the cooling water circulation system to accelerate the cooling rate of the nickel foil. After the nickel foil is cooled to the greenhouse, a graphene film is precipitated on the s...

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Abstract

The invention discloses a preparation method of a graphene film. The method comprises the following steps: implanting carbon into the surface layer of a metal substrate by adopting an ion implantation method in an oxygen-free environment; and corroding the metal substrate with corrosive liquid after the metal substrate is cooled, thus obtaining the graphene film. The preparation method has the beneficial effects that the ion implantation method only needs to be adopted to prepare the graphene film on the surface of the metal substrate, so that short time is required and the efficiency is high; the procedure of additional heating is not needed, so that the energy consumption is low; the graphene film is formed on the surface of the metal substrate and the thickness of the graphene film can be flexibly controlled by controlling the ion implantation quantity, so that the graphene film has a big area and uniform thickness; the ion implantation method is mature in process, so that the obtained graphene film has high quality and is low in production cost.

Description

technical field [0001] The invention belongs to the technical field of carbon materials, and in particular relates to a preparation method of a graphene film. Background technique [0002] Graphene is a two-dimensional carbon atom crystal discovered by Andre K. Geim of the University of Manchester in 2004, and won the Nobel Prize in Physics in 2010, which once again sparked an upsurge in carbon material research. Due to its unique structure and photoelectric properties, it has become a research hotspot in the fields of carbon materials, nanotechnology, condensed matter physics and functional materials, attracting many scientific and technological workers. Graphene has excellent electrical and thermal conductivity and low thermal expansion coefficient, and its theoretical specific surface area is as high as 2630m 2 / g, can be used in effect transistors, electrode materials, composite materials, liquid crystal display materials, sensors, etc. But the main problem encountered...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B32/184
Inventor 周明杰袁新生王要兵
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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