Method of improving defect spalling

Abstract

The invention provides a method for improving defect spalling. The method comprises the following steps: providing a wafer with a SiCOH layer; depositing an NDC layer on the SiCOH layer; depositing aBD layer on the NDC layer; depositing a TEOS layer on the BD layer; rapidly heating the wafer, and peeling off defects of the wafer in advance through the thermal shock of rapid heating; and cleaningthe wafer to remove defects of spalling. According to the method, after the TEOS layer is deposited in the later-stage thin film deposition process, the thermal shock is generated through a rapid heating method, a defect source is released in advance, defect peeling generated in the later-stage thin film deposition process is avoided, the product yield is increased, and the production cost is saved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for improving defect exfoliation. Background technique [0002] In the semiconductor manufacturing process, the first trench (Trench First) process in the latter part of the 55nm logic (Logic) is listed, in order to meet the trench (Trench) and via (Via) etching can be enough to block the copper (CU) layer Usually, the number of dielectric layers in the ion implantation process (IMD Loop) will be as many as 5 layers. For the stacking of multi-layer films, the uniformity of the wafer bevel (WaferBevel) has exceeded the controllable range of the CVD machine and cannot be accurately controlled, and the uneven stacking of the bevel film (BevelFilm) can easily lead to abnormal stress distribution. Defect peeling (Peeling Defect) and then kill the yield. Such as figure 1 as shown, figure 1 It is shown as a schematic diagram of oblique film stack 01 and exfoliatio...

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for improving defect peeling, which is used to solve the problem in the prior art that uneven stacking of sloped films can easily lead to abnormal stress distribution, resulting in defect peeling and lower yield. question

Images