Method for forming aluminum pad structure and device including aluminum pad structure
A technology of aluminum pads and devices, which is applied in the manufacture of semiconductor devices, electrical solid devices, semiconductor/solid devices, etc., can solve the problems of high manufacturing cost and complicated process, and achieve the effect of reducing complexity and manufacturing cost
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Embodiment 1
[0063] Reference Figure 6 , Which illustrates a flowchart of a method for forming an aluminum pad structure of the present application provides one exemplary embodiment, the method comprising:
[0064] Step 601, forming an aluminum metal layer on the first dielectric layer, a first dielectric layer formed in a first metal interconnect layer and the second layer metallic interconnect, a first layer of metal interconnecting lines in the second intermetallic layer below the connection, a contact hole is formed between the first layer and the second metal interconnect layer metallic interconnect.
[0065] Reference Figure 7 Which shows a schematic view of an aluminum metal layer 720 formed on the first dielectric layer 710. like Figure 7 , A first dielectric layer 710 formed in a first metal interconnect layer 7111, and a second layer of metal interconnecting lines 7121,7122, 7111 of the first metallic interconnect layer in the second layer metallic interconnect 7121, below 7122, a fi...
Embodiment 2
[0083] In this embodiment, the passivation layer 730 includes, in order from the bottom layer and the upper silicon nitride layer, an intermediate silicon nitride layer and a top silicon dioxide layer. Difference between Reference Example 1, Example 2 and Example 1 in that:
[0084] Step 603 'is formed on the first dielectric layer, a second layer metallic interconnect other layer of aluminum metal and passivation layer "includes but is not limited to: by a CVD process on the first dielectric layer, a second layer metallic interconnect other and the underlying silicon nitride layer on the aluminum metal layer is deposited; deposited by a CVD process on the underlying silicon dioxide layer intermediate silicon nitride layer; depositing a top layer of silicon nitride by a CVD process on the intermediate layer is a silica layer.
Embodiment 3
[0086] In this embodiment, the second dielectric layer comprises, in order from the bottom layer and the upper silicon dioxide layer, a titanium nitride layer and a top silicon dioxide layer. Reference Example 2, Example 3 and Example 2 is that the difference between:
[0087] Step 604 'forming a second dielectric layer on the passivation layer "includes but is not limited to: silicon dioxide underlayer is deposited by a CVD process on the top layer of the silicon nitride layer; depositing titanium nitride by a CVD process on the underlying silicon dioxide layer layer; top silicon dioxide layer is deposited by a CVD process on the titanium nitride layer.
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