Power module packaging structure and packaging method thereof

Abstract

The invention provides a power module packaging structure and a packaging method thereof. The packaging structure comprises a lining plate, and a module function unit is arranged on the lining plate,wherein the upper surface of the module function unit is covered with a circuit board, and the circuit board is used for forming a complete current loop together with the lining plate and the module function unit. According to the packaging structure, a traditional bonding wire is replaced by the circuit board, so stray inductance of a loop is reduced; meanwhile, a laminated circuit structure is formed by the circuit board, the module function unit and the lining plate, so the stray inductance of the power module can be further reduced. According to the packaging method provided by the invention, only the circuit board, the lining plate, the module function unit and other components need to be connected, and the mutual connection positions of all the components are fixed, so rapid assemblyof the power module can be carried out; meanwhile, point contact connection of bonding wires is replaced by surface-to-surface contact connection, so better temperature distribution is achieved, andthe reliability of the power module is higher.

Description

technical field [0001] The invention relates to the technical field of semiconductor power module devices, in particular to a power module packaging structure and a packaging method thereof. Background technique [0002] A large number of bonding wires are required for the interconnection of chips and substrates in traditional power modules, and the bonding wire structure will generate certain parasitic inductance. During the turn-on and turn-off process of the power module, the current changes sharply, resulting in a large current change rate di / dt. The combined effect of parasitic inductance and current change rate di / dt will generate inductor voltage Vo, the relationship between the two is: Vo=Ls*di / dt, where Ls represents the stray inductance of the switch loop, and the parasitic voltage generated by the bonding wire Inductance is an important part of stray inductance. The superposition of the inductor voltage Vo and the bus voltage will generate a voltage spike. On th...

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Problems solved by technology

[0003] Wide bandgap semiconductor devices, the switching speed is faster, the problem caused by stray inductance will be more serious, the power module with traditional bonding wire structure, the space for reducing inductance is relatively small, so it is necessary to provide a power module that can significantly reduce stray Inductor power module package structure and process method

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