41results about How to "Reduce overshoot voltage" patented technology

The invention relates to an insulated gate bipolar translator (IGBT) with an improved collector structure. The IGBT comprises a semiconductor substrate, wherein the second main surface of the semiconductor substrate is provided with a second conductive type collecting region and a metalized collector; a second conductive type base region is arranged in the semiconductor substrate; the upper part of the second conductive type base region is provided with a first conductive type emitting region; the first main surface of the semiconductor is provided with an insulated gate, an insulated dielectric layer and a metalized emitter; the second conductive type collecting region comprises one or more first regions with a first doping density and one or more second regions with a second doping density; the first regions surround the plurality of the second regions or the first regions and the second regions are arranged alternately and adjacently; the first doping density of the first regions is less than the second doping density of the second regions; and the first doping density of the first regions is greater than the doping density of the first conductive type conductive substrate. TheIGBT has the characteristics of low on-state voltage, lower turn-off loss and higher impact resistance performance.

A discharge lamp lighting device has an oscillation control circuit for determining a frequency with time constant of R and C, a L-C series resonant circuit connected to a half bridge or full bridge operating at the frequency and a circuit in which one end of hot cathodes at both ends of a hot cathode type discharge tube are respectively connected to both ends of a resonant capacitor. A capacitor is further connected in series to other ends of filaments at both ends of the discharge tube for lighting. Dimming of tube current is achieved by changing the oscillation frequency with a DC dimming control voltage by use of a variable capacitor or diode for determining the frequency of the oscillation control circuit. By simultaneously changing the tube current and a filament current of the discharge lamp, the tube current is decreased upon dimming and the filament current is increased.

The invention discloses a package structure of a power semiconductor module, which is characterized in that it comprises a substrate; a casing, the casing is fastened to the substrate; and a power semiconductor module subunit is arranged between the casing and the substrate. In the accommodation space formed by the substrate, it is used to form a topology control circuit structure. The power semiconductor module subunit includes a plurality of backing boards arranged at intervals on the substrate, and the main power terminal is passed between the two facing backing boards. It is connected with the module-level bonding wire, and the top of the main power terminal extends out of the top of the housing; the auxiliary terminal is used to introduce the driving signal into the power semiconductor module subunit, and the bottom pin of the auxiliary terminal Connected with the liner, the top of the auxiliary terminal extends out of the top of the housing. The invention can improve the heat dissipation efficiency of the power semiconductor module, balance parasitic inductance or resistance parameters, improve the consistency of the process, have low loss and good reliability.

The invention belongs to the technical field of electronic circuits and relates to an adaptive voltage regulation circuit for a power converter. The circuit of the present invention includes a logic module, a conduction time generator, a first comparator, a second comparator and a control circuit; the input terminal of the logic module is connected to the output terminal of the power converter, and the output terminal is connected to the conduction time generator The output terminal of the circuit; the positive input terminal of the first comparator is connected to the output terminal of the power converter, the negative input terminal is connected to the output terminal of the control circuit, and the output terminal is connected to the input terminal of the control circuit; the second comparator The positive input terminal of the comparator is connected to the output terminal of the power converter, its negative input terminal is connected to the output terminal of the control circuit, and its output terminal is connected to the input terminal of the control circuit; the output terminal of the control circuit is connected to the input of the conduction time generator terminal; the output terminal of the on-time generator is connected to the power converter. The beneficial effect of the invention is that the inductance current in the voltage regulation process of the power converter is reduced, and the requirement on the inductance is lowered.

The invention discloses a method for improving the dynamic performance of a synchronous rectification primary-side feedback flyback power supply, aiming at the shortcomings of the existing dynamic control algorithm under low-power DCM, especially in the case of heavy load switching to light load, the dynamic recovery time For the defect of too long, by controlling the switching off of the primary side switching tube of the converter and the switching of the secondary side synchronous rectifier tube with a fixed duty ratio, the energy of the load capacitance at the output end is extracted to the primary side, so that the output voltage drops rapidly, and at the same time it is always at a fixed The frequency of the output voltage is sampled. When the output voltage drops to the rated value, it is judged according to the load size that the system corresponds to the steady state mode after jumping out of the high dynamic mode, and then the system enters the steady state mode. The invention can shorten the output voltage within 2.5ms, and the output voltage ripple is very small when the system leaves the dynamic mode and enters the steady state mode, and significantly improves the dynamic performance of the flyback converter under high power.

The invention discloses a DC-DC converter control system which comprises an analog-digital converter (ADC), control logics, a DPWM (digital pulse-width modulation) unit and a driving unit. The analog-digital converter (ADC) is connected with an output sampling point of a DC-DC converter and the control logics respectively, the control logics are connected with the DPWM unit, and an output end of the DPWM unit is connected with the driving unit. The DC-DC converter control system has the advantages that output voltages of the DC-DC converter are sampled and monitored to obtain error signals, the error signals are subjected to control logic operation to obtain duty cycle signals, switch control signals can be obtained by the aid of the DPWM unit, the driving capacity of the switch control signals can be improved by the driving unit, accordingly, on and off of power tubes of the DC-DC converter can be controlled, specified values can be quickly and stably outputted by the DC-DC converter when input voltages and load change, the DC-DC converter control system is low in overshoot voltage and short in required recovery time, and excellent dynamic performance of the system can be guaranteed.

The invention relates to a groove-type anode fast recovery diode with bipolar Schottky control and its manufacturing method, comprising: a cathode metal, an N-type intrinsic region above the cathode metal, and an N-type intrinsic region above the N-type intrinsic region The anode metal is provided with lightly doped N-type regions and heavily doped N-type regions spaced apart from each other on the cathode metal, the bottom of the lightly doped N-type region is in Schottky contact with the cathode metal, and in the N-type intrinsic region There are heavily doped P-type regions and lightly doped P-type regions spaced apart from the anode metal, and the upper surface of the heavily doped P-type region is lower than the upper surface of the lightly doped P-type region, forming a concave In the slot-type anode area, the lightly doped P-type area and the anode metal are in Schottky contact. The manufacturing method of the two-pole Schottky-controlled recess type anode fast recovery diode is characterized in that the Schottky contacts on the surface of the anode and the side wall can be formed simultaneously by one-step etching.

The present invention provides a voltage generator, comprising: a first voltage regulator, which supplies an output voltage to an output terminal according to a reference voltage; a second voltage regulator, which decides to operate in an enable mode or a disable mode according to an enable signal, when the first The two voltage regulators operate in the enable mode to supply an output voltage to the output terminal according to the reference voltage; and the initial voltage generator, when the enable signal switches the second voltage regulator from the disable mode to the enable mode, the initial The voltage generator keeps the feedback voltage of the second voltage regulator at an initial voltage value close to the reference voltage, so that the feedback voltage of the second voltage regulator can be quickly locked to the reference voltage and reduce the settling time and overshoot voltage of the output voltage.

The present invention relates to a superjunction semiconductor device. In at least one cell structure of the superjunction semiconductor device, the first-type body region includes at least two segmented body regions arranged in the third direction, and the source region is disposed in a part of the segmented body region away from the drain region The surface of the gate oxide layer is arranged on the surface of another part of the segmented body region away from the drain region, and the gate is arranged on the surface of the gate oxide layer away from the segmented body region. In this cell structure, The segmented body region where the gate oxide layer and the gate are arranged is separated from the segmented body region where the source region is arranged, which can weaken the shielding effect of the first type doping column on the gate, and can increase the Miller capacitance Cgd compared with the traditional structure. Helps reduce turn-off speed, reduce overshoot voltage, improve EMI problems, and studies have shown that it has less impact on Qg and device withstand voltage performance.

The invention discloses an anti-overshoot circuit for a constant voltage control power supply, which belongs to the technical field of integrated circuits. The power supply control circuit in the circuit includes an operational amplifier. Connect the reference voltage VREF to the input terminal; the anti-overshoot circuit is connected with the reverse input terminal of the operational amplifier and obtains a comparison voltage and a set voltage through the anti-overshoot circuit; the output terminal of the switched capacitor is connected to the input terminal of the compensation controller Connection, the output terminal of the compensation controller is connected to the operational amplifier OVCT, and the compensation controller generates the compensation control voltage to control the operational amplifier; through the comparison between the feedback voltage and the comparison voltage, switch the set voltage to access or not access the compensation controller to solve the problems of longer start-up time and higher overshoot voltage.

The invention discloses a low overshoot voltage unidirectional TVS, which comprises a P-type substrate and an N+ concentrated phosphorus region diffused on the upper and lower surfaces of the P-type substrate, and the N+ concentrated phosphorus region covers the upper and lower surface areas of the P-type substrate respectively. 2 / 3-5 / 6; the upper surface of the TVS device is oxidized with a silicon dioxide passivation layer, the upper surface of the TVS device is provided with a metal electrode K, and the lower surface of the TVS device is provided with a metal electrode A; the invention also discloses the low A method for manufacturing an overshoot voltage unidirectional TVS, comprising the following steps: step S1, substrate preparation; step S2, oxidation; step S3, photolithography of the concentrated phosphorus region; step S4, diffusion of the concentrated phosphorus region; step S5, photolithography of the lead hole ; Step S6, steaming aluminum; Step S7, aluminum reverse etching; Step S8, steaming aluminum alloy; Step S9, steaming Ti-Ni-Ag alloy; Step S10, Ti-Ni-Ag reverse etching. Compared with the unidirectional TVS of the traditional structure, the present invention has one more concentrated phosphorus diffusion region and one less boron concentration diffusion region in structure, and diffuses the concentrated phosphorus region on the lower surface of the P-type substrate, which can effectively reduce the overshoot voltage and enhance the device. surge capability.