Bidirectional thyristor and electronic product

A bidirectional thyristor, carrier technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of thyristor surge capacity reduction, large capacitance, product restrictions, etc., to reduce concentration, reduce overshoot voltage, and large discharge effect of space

Active Publication Date: 2019-12-20
WILL SEMICON (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the characteristics of the bidirectional thyristor structure, when the triac is triggered by a surge, a large number of carriers are dissipated to the substrate, as non-equilibrium carriers before being recombined, it is equivalent to the space charge distribution in the longitudinal direction of the substrate The local space of the space charge, and the concentration of the space charge determines the intensity of the electric field, and then determines the space potential difference, that is, the overshoot voltage, and the high overshoot voltage will reduce the surge capability of the thyristor, and also affect the application range of the product. The commonly used method The purpose of reducing the overshoot voltage is achieved by increasing the substrate concentration of the thyristor, but the high substrate concentration will cause the problem of large capacitance, which limits the application of the product in high frequency

Method used

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  • Bidirectional thyristor and electronic product
  • Bidirectional thyristor and electronic product
  • Bidirectional thyristor and electronic product

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Such as Figure 4 and Figure 5 as shown, Figure 4 The bidirectional thyristor in the prior art and the figure 1 The structure in is similar, so it will not be repeated here. In this embodiment, only the parts different from those in the prior art will be described in detail. In this embodiment, the substrate is N-type for detailed description. The second N well 03-1 Used to receive trigger pulses and emit carriers to the first N well 02-1, the first N well 02-1 is used to emit carriers to the above N substrate, by increasing the size of the first N well 02 The trigger area 09-1 of -1 solves the technical problem of the small space for electrons in the prior art, and the trigger area of ​​the second N well 03-1 remains unchanged. In the embodiment of the present invention, the first N well 02-1 The trigger area 09-1 of the first N well 02-1 is set to emit design and then the trigger area 09-1 of the first N well 02-1 is set, and the trigger area of ​​the first N wel...

Embodiment 2

[0056] Such as Figure 6 as shown in Figure 4 and Figure 6 As shown, the bidirectional thyristor in this embodiment is different from that in the prior art figure 1 In this embodiment, only the parts different from those in the prior art will be described in detail. When the substrate is an N substrate, this embodiment simultaneously enlarges the first N well 02- The trigger area 09-1 of 1 and the trigger area of ​​the second N well 03-1 are reduced to solve the technical problem in the prior art that the space for electron detachment is small. exist Figure 6 The cross-section of the second N well 02-1 is a quadrangle, or other shapes, but is not limited thereto. A notch-shaped structure is provided on the side of the quadrilateral. The notch-shaped structure can be a groove or other shapes, but is not limited thereto. In this embodiment, the notch-shaped structure is an inverted trapezoidal structure, which is similar to the above-mentioned inverted trapezoidal structu...

Embodiment 3

[0061] Such as Figure 7 as shown in Figure 4 and Figure 7 As shown, the bidirectional thyristor in this embodiment is different from that in the prior art figure 1In this embodiment, only the parts different from those in the prior art are introduced in detail. When the substrate is an N substrate, the trigger region of this embodiment is set in the second N well In order to increase the symmetry of triggering, the triggering area is set at two corner positions of the quadrilateral, which correspond to the corner positions of the first N-well, which can increase the The trigger area can solve the technical problem of the small space for electronic dismissal in the prior art.

[0062] exist Figure 7 The cross-section of the second N well in the middle is a quadrangle, and may also be other shapes, but is not limited thereto. A notch-shaped structure is provided at the corner of the quadrangle, the trigger region 03-11 on the second N well 03-1 is set corresponding to t...

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PUM

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Abstract

The invention discloses a bidirectional thyristor and an electronic product. The bidirectional thyristor comprises a substrate; a first trap and a second trap which are formed on the substrate, wherein the first trap and/or the second trap are/is provided with a trigger area/a trigger area used for carrier emission. The electronic product comprises the bidirectional thyristor. The technical schemedisclosed by the invention can realize that overshoot voltage is formed as low as possible before the bidirectional thyristor is started.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a bidirectional thyristor and electronic products. Background technique [0002] The bidirectional thyristor is composed of PN five-layer semiconductor material, which has two main electrodes and a control pole. The bidirectional thyristor is equivalent to the reverse parallel connection of two unidirectional thyristors, and has a common control pole. The bidirectional thyristor and the unidirectional thyristor Like the thyristor, it also has trigger control characteristics. Its trigger control characteristics are very different from those of unidirectional thyristors, because no matter what polarity voltage is connected between the anode and the cathode, as long as a trigger pulse is applied to its control electrode, no matter what the pulse is The polarity can make the bidirectional thyristor turn on, so the forward and reverse characteristics of the bidirectional ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/747H01L29/06
CPCH01L29/747H01L29/0619
Inventor 胡勇海
Owner WILL SEMICON (SHANGHAI) CO LTD
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