Silicon-based substrate, substrate base plate and manufacturing method thereof, and photoelectric device

Abstract

The invention relates to a silicon-based substrate, a substrate base plate and a manufacturing method thereof, and a photoelectric device, and relates to the field of electronic technology application. The substrate base plate comprises: a silicon-based substrate, wherein one surface of the silicon-based substrate is provided with periodic convex structures, and inclination angles are formed at the side surfaces and the bottom surfaces of each convex structure; and an III-V material layer arranged on one surface, having the convex structure, of the silicon-based substrate. According to the invention, in the substrate base plate, one surface of the silicon-based substrate is not a silicon (100) crystal surface any more and is a periodic convex structure, the self-annihilation of dislocationcan be realized by the convex structure, and dislocation caused by lattice mismatch and a reversed phase domain is limited on the silicon-based substrate layer, so that the neat crystal structure canbe kept when the III-V material epitaxially grows on the silicon-based substrate so as to reduce the problems of lattice mismatch, inverse domain and the like between the silicon-based substrate andthe III-V material and improve the yield of the III-V material on the silicon-based substrate; and the method is used for forming the high-quality III-V material on the silicon-based substrate.

Description

Technical field [0001] The present disclosure relates to the application field of electronic technology, in particular to a silicon-based substrate, a base substrate and a manufacturing method thereof, and a photoelectric device. Background technique [0002] Silicon-based optoelectronic integration technology refers to the technology of integrating optoelectronic devices on a silicon-based substrate. Devices such as light sources, amplifiers or modulators formed by this technology have the advantages of low cost, micro size and high integration. [0003] However, because silicon is an indirect bandgap material, it has poor light-emitting properties, and the third and fifth group (also called III-V group) materials have excellent optical properties. Therefore, the preparation of the third and fifth group materials on a silicon-based substrate can form Efficient light-emitting devices provide a good foundation for the formation of optoelectronic devices. For example, the third and...

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Problems solved by technology

[0004] However, there are problems such as lattice mismatch and anti-phase domains between the silicon (100) crystal plane and the III-V material, which makes the formation of the III-V material on the silicon-based substrate with the silicon (100) crystal plane extremely difficult.

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