The invention relates to a
silicon-based substrate, a substrate base plate and a manufacturing method thereof, and a photoelectric device, and relates to the field of electronic technology application. The substrate base plate comprises: a
silicon-based substrate, wherein one surface of the
silicon-based substrate is provided with periodic convex structures, and inclination angles are formed at the side surfaces and the bottom surfaces of each
convex structure; and an III-V material layer arranged on one surface, having the
convex structure, of the silicon-based substrate. According to the invention, in the substrate base plate, one surface of the silicon-based substrate is not a silicon (100)
crystal surface any more and is a periodic
convex structure, the self-
annihilation of dislocationcan be realized by the convex structure, and
dislocation caused by
lattice mismatch and a reversed
phase domain is limited on the silicon-based substrate layer, so that the neat
crystal structure canbe kept when the III-V material epitaxially grows on the silicon-based substrate so as to reduce the problems of
lattice mismatch, inverse domain and the like between the silicon-based substrate andthe III-V material and improve the yield of the III-V material on the silicon-based substrate; and the method is used for forming the high-quality III-V material on the silicon-based substrate.