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Cation doping device and cation doping method for metal oxide film

An oxide film, cation technology, applied in electrochemical generators, instruments, non-aqueous electrolyte battery electrodes, etc., can solve the problem of inability to further control the ion concentration distribution and control the doping area, and achieve the effect of strong universality

Inactive Publication Date: 2020-05-22
WUYI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the ions entering the film layer can fill the entire film area evenly by means of concentration difference diffusion, but it is impossible to further control the concentration distribution of ions in the metal oxide film and control the doping area.

Method used

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  • Cation doping device and cation doping method for metal oxide film
  • Cation doping device and cation doping method for metal oxide film
  • Cation doping device and cation doping method for metal oxide film

Examples

Experimental program
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Effect test

Embodiment 1

[0041] This example provides a cation doping device for a metal oxide thin film, the structure of which is as follows figure 1 shown, including

[0042] The base layer 10, and the conductive layer 20 arranged on the surface of the base layer 10, the two sides of the conductive layer 20 are provided with the electrode layer 30, the surface of the conductive layer 20 is provided with a metal oxide film 40, the metal An electrolyte layer 50 is provided on the surface of the oxide film 40;

[0043] The conductive layer 20 includes a first conductive layer 210 and a second conductive layer 220 separated from each other, and a target doping region covering layer 230 is disposed between the first conductive layer 210 and the second conductive layer 220 .

[0044] Wherein, the base layer 10 includes glass. The conductive layer 20 includes ITO thin film, AZO thin film and FTO thin film. The metal oxide thin film 40 is one of tungsten trioxide thin film, molybdenum oxide thin film, t...

Embodiment 2

[0046] This example provides a method for cationic doping of metal oxide thin films, the steps include:

[0047] S1: taking the base layer, and setting a conductive layer on the surface of the base layer;

[0048] S2: setting electrode layers on both sides of the conductive layer;

[0049] S3: preparing a metal oxide film on the surface of the conductive layer;

[0050] S4: forming an electrolyte layer after cationic coating on the surface of the metal oxide film;

[0051] S5: Applying a doping voltage to the electrode layer, the doping voltage being an alternate forward voltage and a reverse voltage.

[0052] After the above steps are completed, the layers on the surface of the metal oxide film are removed, and the voltage is removed, so that the dopant cations stop migrating and stabilize in the metal oxide film, that is, the target doped region is permanently implanted.

[0053] In step S1, the specific method of setting a conductive layer on the surface of the base laye...

Embodiment 3

[0058] In this example, the tungsten trioxide film is doped, and the doped cation is calcium ion. The doping process is as follows: figure 2 As shown, the specific steps are as follows:

[0059] S1: Take cleaned ordinary glass as the base layer 10, stick 1cm of high-temperature glue on the middle area of ​​the glass surface to form the target doping area covering layer 230, and then prepare an ITO film on the glass surface to form the first conductive layer 210 and the second conductive layer 220;

[0060] S2: The electrode layer 30 is prepared by sticking 0.5 cm of conductive glue on the side surfaces of the first conductive layer 210 and the second conductive layer 220, and the electrode layer 30 is only in contact with the conductive layer;

[0061] S3: preparing a tungsten trioxide film 40 on the surface of the conductive layer;

[0062] S4: preparing a liquid or gel of calcium chloride, coating it on the surface of the tungsten trioxide film 40 to form an electrolyte l...

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Abstract

The embodiment of the invention provides a cation doping device and a cation doping method for a metal oxide film. The directional migration of doped ions can be realized; relative to the prior art, the cation doping device utilizes energization current to dope metal oxide and liquid (or gel). Namely, a magnetic field is formed at the solid-liquid interface of the electrolyte layer and the metal oxide film; when the doped ions are subjected to heat balance exchange at the solid-liquid interface; the energy barrier differences on the two sides are different, the ions are accelerated from the metal oxide to the liquid (or gel), and the speed from the liquid (or the gel) to the metal oxide can be reduced, so that the doped ions move in the metal oxide and the liquid (or the gel) for semi-circular motion with different radiuses under the action of a magnetic field, the doped ions form macroscopic movement amount on the surface of the metal oxide, and the directional migration of the dopedions is realized.

Description

technical field [0001] The invention belongs to the technical field of metal oxide thin films, and in particular relates to a cation doping device and a doping method for metal oxide thin films. Background technique [0002] The incorporation and extraction of cations into and out of metal oxide thin films is widely used in the charging and discharging of energy storage devices, as well as in electrochromic devices. [0003] In the prior art, positive ions can only be injected vertically into the metal oxide thin film layer driven by an external electric field. Although the ions entering the film layer can fill the entire film area evenly by means of concentration difference diffusion, but it is impossible to further control the concentration distribution of ions in the metal oxide film and control the doping area. If the cations injected into the metal oxide body can be realized, and the controllable lateral migration can be performed, and the moved ions can still exist st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M10/058H01M4/13H01M4/139H01M10/42G02F1/1523G02F1/1524G02F1/153G02F1/155
CPCG02F1/1525G02F1/1533G02F1/155G02F1/1524H01M4/13H01M4/139H01M10/058H01M10/4235Y02E60/10Y02P70/50
Inventor 王欣月李智信凌洁朱清滢唐秀凤王忆
Owner WUYI UNIV
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