Tungsten titanium powder mixing method

Abstract

The invention provides a tungsten titanium powder mixing method. According to the method, tungsten powder is put into titanium powder in batches, at least multiple powder mixing processes are performed, and the tungsten powder and the titanium powder are mixed evenly. The method particularly aims at tungsten titanium target materials of W-10%Ti or below, the problem of spots of the tungsten titanium target materials is solved, the percent of pass of tungsten titanium target materials is increased, and the method has the relatively high industrial application value.

Description

technical field [0001] The invention relates to the technical field of target preparation, in particular to a tungsten-titanium powder mixing method. Background technique [0002] With the continuous development of PVD technology, the demand and quality requirements for alloy targets are increasing day by day. The finer the grains of the alloy target, the more uniform the composition structure, and the smaller the surface roughness, the thin film formed on the silicon wafer by PVD more uniform. In addition, the purity of the formed film is also closely related to the purity of the alloy target, so the quality of the film after PVD mainly depends on the purity, density, grain size, microstructure and other factors of the alloy target. [0003] Tungsten-titanium target is a typical alloy target. Large-scale semiconductor integrated circuits, solar cells, etc. will use tungsten-titanium targets for PVD coating to form a barrier layer. For now, the requirements for tungsten-ti...

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Problems solved by technology

[0005] However, in production, it is found that the surface of W-3% Ti target and W-10% Ti target is prone to mottling or spotting, which is unacceptable for high-quality and high-demand semiconductor sputtering targets. With the appearance of spots, the bad scrap rate is as high as 45%, which leads to the failure of normal shipment and use of products, resulting in serious cost waste

[0006] However, the reason for the mottling has not been reported. The W-15%Ti, W-30%Ti and W-50%Ti of the same process hardly appear mottling. For this, the temperature, pressure and temperature in the production process The heating rate, heat preservation and pressure holding time, etc. have been adjusted and tried many times, but the reason for the mottling has not been found.

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