Physical Vapor Deposition Equipment for Improving Reactive Sputtering Film Layer Uniformity

Abstract

The invention provides physical vapor deposition equipment used for improving the uniformity of a reactive sputtering film. The physical vapor deposition equipment comprises a cavity, a target material bearing device, a base, an annular pipeline, multiple nozzles, a baffle and an annular press ring. An exhaust opening is formed in the lower portion of the cavity. The base is located in the cavity.The baffle is located in the cavity and located on the periphery of a target material and the base. The annular pipeline is located between the target material and the base and communicates with a reacting gas source. One end of each of the multiple nozzles is connected to the annular pipeline, and the other ends of the multiple nozzles face the base so as to uniformly spray reacting gas to the surface of a wafer. One end of the annular press ring is in contact with the baffle, and the other end of the annular press ring extends to the upper portion of the wafer. The physical vapor depositionequipment can further comprise a flow guide disc, the flow guide disc is located on the annular press ring, the inner diameter of the flow guide disc is larger than or equal to the diameter of the wafer, multiple flow guide troughs extending in the radial direction of the flow guide disc are arranged on the lower surface of the flow guide disc at intervals, and the flow guide disc is used for exhausting residual gas through the flow guide troughs. The physical vapor deposition equipment contributes to improving film uniformity and reducing production cost.

Description

technical field [0001] The invention relates to a semiconductor manufacturing equipment, in particular to a physical vapor deposition equipment for improving the uniformity of reactive sputtering film layers. Background technique [0002] With the development of modern engineering technology, various compound films are increasingly used, and compound films account for about 70% of all film materials. In the past, most compound thin films were prepared by CVD (Chemical Vapor Deposition) method. CVD technology has developed PECVD (Plasma Enhanced Chemical Vapor Deposition), MOCVD (Metal Organic Compound Chemical Vapor Deposition) and other new processes. However, because CVD deposition needs to be carried out at high temperature, the sources of materials are limited. In addition, many CVD material sources are toxic and / or corrosive, leading to problems such as environmental pollution and coating uniformity, and causing great occupational safety hazards. There are many limita...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a physical vapor deposition equipment for improving the uniformity of the reactive sputtering film layer, which is used to solve the problem of The uneven distribution of gas in the center and edge of the wafer will result in poor uniformity of the thickness, composition and square resistance of the deposited film layer, resulting in a decrease in production yield and degradation of device performance.

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