PECVD film plating machine

Abstract

The invention provides a PECVD film plating machine. The PECVD film plating machine comprises a vacuum furnace cavity used for film plating operations, the vacuum furnace cavity is internally providedwith at least two stations relating to silicon wafers, at a silicon wafer loading station, the silicon wafers are loaded into hollow-out carrier plates through a translation mechanism, the hollow-outcarrier plates comprise many, the multiple hollow-out carrier plates are arranged up and down at the silicon wafer loading station and are uniformly distributed equidistantly to form a silicon wafercarrier tool, a single hollow-out carrier plate is at least provided with one hollow-out portion and one installation portion, the hollow-out portions are located at the middle portions of the hollow-out carrier plates, the installation portions are located on one sides of the hollow-out carrier plates, and the installation portions of the multiple hollow-out carrier plates are located on the samesides of the hollow-out carrier plates. By means of the PECVD film plating machine, a method of vertical wafer feeding and horizontal wafer inserting is adopted, alternate opposite inserting of the silicon wafers and electrode slices is finished inside the vacuum furnace cavity, as for the film plating process, atmosphere control can be performed from wafer inserting to the film plating process,adjustment of the film plating environment is facilitated, and the film plating quality is improved.

Description

technical field [0001] The invention relates to a coating machine, in particular to a passivation film coating equipment used on the surface of a solar cell. Background technique [0002] The plasma-enhanced chemical vapor deposition system uses microwave or radio frequency to ionize the gas containing the constituent atoms of the film to form plasma locally, and the plasma is chemically active and easy to react, depositing the desired film on the substrate. In order to enable the chemical reaction to proceed at a lower temperature, the activity of the plasma is used to promote the reaction, so this CVD is called plasma-enhanced chemical vapor deposition (PECVD). [0003] In the solar photovoltaic industry, PECVD is often used to prepare anti-reflection films such as silicon nitride films, silicon carbide films, silicon oxide films, etc.; traditional PECVD coatings are usually single-sided coatings, which have high requirements for the single-sidedness of the film. Traditio...

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Problems solved by technology

[0003] In the solar photovoltaic industry, PECVD is often used to prepare anti-reflection films such as silicon nitride films, silicon carbide films, silicon oxide films, etc.; traditional PECVD coatings are usually single-sided coatings, which have high requirements for the single-sidedness of the film. Traditional production equipment is easy to cause winding plating, which cannot avoid the problem of card spot printing

At the same time, for ultra-thin silicon wafers, it is easy to cause problems such as silicon wafer deformation and high fragmentation rate during the production process.

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