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A kind of PECVD coating machine

A coating machine and silicon wafer technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of high single-sidedness of the film, deformation of silicon wafers, wrapping plating, etc., and achieve a favorable level Stability, increase coating output, improve the effect of coating quality

Active Publication Date: 2020-12-29
LAPLACE RENEWABLE ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the solar photovoltaic industry, PECVD is often used to prepare anti-reflection films such as silicon nitride films, silicon carbide films, silicon oxide films, etc.; traditional PECVD coatings are usually single-sided coatings, which have high requirements for the single-sidedness of the film. Traditional production equipment is easy to cause winding plating, which cannot avoid the problem of card spot printing
At the same time, for ultra-thin silicon wafers, it is easy to cause problems such as silicon wafer deformation and high fragmentation rate during the production process.

Method used

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  • A kind of PECVD coating machine
  • A kind of PECVD coating machine
  • A kind of PECVD coating machine

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Embodiment Construction

[0028] Specific embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings. It should be noted that specific embodiments are only detailed elaborations of the present invention, and its purpose is to enable those skilled in the art to better understand and implement the present invention. regarded as a limitation of the present invention.

[0029] Such as Figure 1-3 As shown, the present invention provides a PECVD film coating machine, including a vacuum furnace chamber 100 for coating operations, said vacuum furnace chamber 100 is provided with at least two work stations related to silicon wafers, one of which is the pre-processing of silicon wafers. Loading station 101, the other is the firing station 102 of the silicon wafer, above the firing station 102 of the silicon wafer is the loading station 103 of the silicon wafer, on the loading station 103 of the silicon wafer, the silicon wafer 200 is passed The ...

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Abstract

The invention provides a PECVD film coating machine, which includes a vacuum furnace chamber used for coating operations. At least two work stations related to silicon wafers are arranged in the vacuum chamber. The mechanism is loaded into the hollow carrier board. The hollow carrier board includes multiple hollow carrier boards. The multiple hollow carrier boards are arranged up and down at the loading station of the silicon wafer and are evenly spaced to form a silicon wafer carrier. There is at least one hollow carrier board on a single hollow carrier board. A hollowed out part and a mounting part, the hollowed out part is located in the middle of the hollowed out carrier board, the installation part is located on one side of the hollowed out carrier board, and the installation parts of a plurality of hollowed out carrier boards are located on the same side of the hollowed out carrier board; The method of inserting silicon wafers and horizontal wafers, and inserting silicon wafers and electrode wafers alternately in the vacuum furnace chamber is completed. For the coating process, the atmosphere can be controlled from the insertion of wafers to the coating process, which is conducive to adjusting the coating environment. Improve coating quality.

Description

technical field [0001] The invention relates to a coating machine, in particular to a passivation film coating equipment used on the surface of a solar cell. Background technique [0002] The plasma-enhanced chemical vapor deposition system uses microwave or radio frequency to ionize the gas containing the constituent atoms of the film to form a plasma structure locally, and the plasma structure is highly chemically active and easy to react, depositing the desired film on the substrate. In order to enable the chemical reaction to proceed at a lower temperature, the activity of the plasma structure is used to promote the reaction, so this CVD is called plasma structure enhanced chemical vapor deposition (PECVD). [0003] In the solar photovoltaic industry, PECVD is often used to prepare anti-reflection films such as silicon nitride films, silicon carbide films, silicon oxide films, etc.; traditional PECVD coatings are usually single-sided coatings, which have high requirement...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/50C23C16/458C23C16/54C23C16/52
CPCC23C16/50C23C16/4583Y02P70/50
Inventor 林佳继刘群张武朱太荣庞爱锁林依婷
Owner LAPLACE RENEWABLE ENERGY TECH CO LTD
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