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III-V group/silicon material slotting bonding laser structure and method thereof

A technology of lasers and silicon materials, which is applied to lasers, laser components, semiconductor lasers, etc., can solve the problems of not being suitable for integrated chip light source devices, and the inability to make light-emitting devices, so that it is not easy to decompose, reduce manufacturing processes, and simplify process steps Effect

Active Publication Date: 2020-06-09
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI +1
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Problems solved by technology

However, as an indirect bandgap semiconductor, silicon materials cannot be used to make light-emitting devices, and are not suitable as light source devices in integrated chips.

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  • III-V group/silicon material slotting bonding laser structure and method thereof
  • III-V group/silicon material slotting bonding laser structure and method thereof
  • III-V group/silicon material slotting bonding laser structure and method thereof

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Embodiment Construction

[0051] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0052] According to one embodiment of the present invention, there is provided a method for laser structure of III-V group / silicon material groove bonding, such as figure 1 Shown include:

[0053] Step 1: preparing SOI ridge waveguide structure;

[0054] Step 2: Fabricate the groove type III-V group laser;

[0055] Step 3: Embedding the SOI ridge waveguide structure into the groove of the III-V laser for alignment and bonding. After bonding, an evanescent wave coupling structure is formed, and the laser light is coupled out from the SOI waveguide port.

[0056] Wherein, the order of step 1 and step 2 can be interchanged, that is, the order of preparing the ridge waveguide structure and manufacturing the III-V group lase...

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Abstract

The invention discloses a III-V group / silicon material slotting bonding laser structure and a method thereof, which relate to the field of structural design of hybrid lasers. The method comprises thesteps of: preparing a ridge waveguide structure, manufacturing a groove type III-V group laser, and embedding the ridge waveguide structure into the III-V group laser groove for alignment and bonding,forming an evanescent wave coupling structure after bonding, and coupling and outputting laser light from an SOI waveguide port. The laser with a slotted structure is coupled with the silicon-based device, and a slotted embedded structure is adopted in the longitudinal direction, so that the spatial offset distance of the silicon-based transmission device is limited in the transverse direction, the bonding strength is improved, and the bonding difficulty is reduced; in addition, the ZnO transparent conductive thin film is used for assisting in bonding the hybrid laser, ZnO has good transmittance, and a low-resistance conductive layer can be formed after the high-temperature thin film is formed.

Description

technical field [0001] The invention relates to the field of structural design of hybrid lasers, in particular to a laser structure and a method for groove bonding of III-V groups and silicon materials. Background technique [0002] Fabrication of transmission devices on silicon-based wafers is the most mature and widely used basic material. The transmission structure formed by the refractive index difference between silicon and silicon oxide is suitable for light transmission in the communication band, and can well confine light in the transmission device. However, as an indirect bandgap semiconductor, silicon material cannot be used to make light-emitting devices, and is not suitable as a light source device in an integrated chip. The III-V semiconductor material is a direct bandgap semiconductor material, which can make a high-efficiency on-chip laser in the communication band. The hybrid laser combines the advantages of the two materials, but the two materials have dif...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/22H01S5/343
CPCH01S5/2202H01S5/343
Inventor 许兴胜秦璐靳思玥徐波
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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