Groove type wet etching device

A wet etching, groove-type technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of time-consuming and labor-intensive concentration alarm, low concentration of hydrofluoric acid, unfavorable etching process and other problems, so as to prevent deformation Effect

Pending Publication Date: 2020-06-12
YANGTZE MEMORY TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the aforementioned method of forming diluted hydrofluoric acid in the acid tank or process tank easily makes the concentration of the

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Groove type wet etching device
  • Groove type wet etching device
  • Groove type wet etching device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] As stated in the background technology, but the aforementioned method of forming diluted hydrofluoric acid in the acid tank or process tank tends to make the concentration of the formed hydrofluoric acid low or high, which is not conducive to the etching process, and in order to eliminate the concentration Calling the police is time consuming.

[0031] The study found that when dilute hydrofluoric acid is formed in the acid bath or process bath, the bath wet etching equipment will detect the concentration of hydrofluoric acid in the acid bath or process bath. When the concentration of hydrofluoric acid in the acid tank or process tank is too high (the measured concentration value is greater than the set concentration value) or low (the measured concentration value is less than the set concentration value), a corresponding alarm will be given to stop the etching process. conduct. When such an alarm occurs, equipment personnel usually need to manually change the acid to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a groove type wet etching device. The device comprises a process tank and at least one acid liquor supply tank, a connecting duct and a support member, wherein the position ofthe process tank is lower than that of the acid liquor supply tank; wherein the acid liquor supply tank is communicated with the process tank through a connecting pipeline; the connecting pipeline atleast comprises a transverse pipeline and a longitudinal pipeline which are connected; the inlet end of the transverse pipeline is connected with the acid liquor supply tank; wherein the outlet end ofthe longitudinal pipeline is connected with the process tank, the acid liquor supply tank is used for storing acid liquor and supplying the stored acid liquor into the process tank through the connecting pipeline, and the process tank is used for diluting the acid liquor supplied by the acid liquor supply tank or mixing a plurality of supplied acid liquors so as to carry out an etching process; and the supporting part is in contact with the transverse pipeline and is used for keeping the transverse pipeline horizontal. The groove type wet etching device ensures that the concentration of the acid can be kept stable after each time of acid change.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a groove type wet etching device. Background technique [0002] The etching process is a process of selectively etching or stripping the surface of the semiconductor substrate or the film covered on the surface according to the mask pattern or design requirements. The etching process is not only the basic manufacturing process of semiconductor devices and integrated circuits, but also applied to the processing of thin film circuits, printed circuits and other fine patterns. [0003] At present, there are two main etching methods: wet etching and dry plasma etching. In wet etching, the etchant is a liquid chemical mixture that chemically reacts with the wafer substrate to produce a soluble substance that dissolves in the solution, for example, a silicon dioxide film is etched with a solution containing hydrofluoric acid , etch aluminum films with phosphoric acid. As the main equip...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/67
CPCH01L21/67086
Inventor 丁齐齐
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap