Application of silicon isotope Si-30 in semiconductor material or semiconductor device capable of resisting medium-high energy neutron radiation

Abstract

The invention discloses an application of a silicon isotope Si-30 in a semiconductor material or a semiconductor device capable of resisting medium-high energy neutron radiation. The abundance of thesilicon isotope Si-30 is higher than the natural abundance of the silicon isotope Si-30 in natural silicon, the silicon isotope Si-30 is used as a semiconductor material, under the irradiation of a medium-high energy neutron source with the energy range of 1eV to 10MeV, the off-site number DPA of silicon atoms generated by the material can be reduced by about 35% to the maximum extent compared with that of a natural silicon material, and the medium-high energy neutron irradiation resistance can be effectively improved. Therefore, when the silicon isotope Si-30 is used as a semiconductor material for resisting medium-high energy neutron radiation, the medium-high energy neutron radiation resistance of the semiconductor device can be greatly improved, and functional degradation and even failure caused by damage of an integrated circuit are avoided.

Description

technical field [0001] The invention relates to the field of semiconductor material science, in particular to the application of a silicon isotope Si-30 in semiconductor materials or semiconductor devices resistant to medium and high energy neutron radiation. Background technique [0002] Various materials are used in semiconductor electronic devices used in the prior art, including semiconductor silicon substrates, and various dielectric layers formed on silicon substrates, the most common being silicon oxide or silicon nitride or carbide Silicon or SiGe material. Among them, whether it is a silicon substrate or a silicon oxide or silicon nitride or silicon carbide or silicon germanium material on a silicon substrate, the silicon used is composed of Si-28 with a natural abundance of 92.223%, Si-29 with a natural abundance of 4.685%, and Si-29 with a natural abundance of 4.685%. Natural silicon composed of Si-30 with a natural abundance of 3.092%. [0003] However, when th...

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Problems solved by technology

[0003] However, when the semiconductor electronic equipment is in the strong neutron irradiation field mainly composed of medium-energy and high-energy neutrons in the environment of outer space or nuclear accident, the semiconductor integrated circuits of spacecraft or nuclear emergency rescue robots are extremely vulnerable to large The bombardment of medium and high-energy neutrons can cause damage to integrated circuits and cause functional degradation or even failure.

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