Radiation hardening material with insulation buried layer and preparation method of radiation hardening material

Abstract

The invention relates to the field of preparation of semiconductor materials and provides a preparation method of a radiation hardening material with an insulation buried layer. The preparation method comprises the steps of: providing a device substrate and a support substrate; respectively growing a first insulation layer and a second insulation layer on exposed surfaces of the device substrate and the support substrate; sequentially growing a nanocrystal layer and a third insulation layer on the exposed surface of the first insulation layer by adopting a chemical vapor deposition process to form a nanocrystal composite layer; and bonding the exposed surface of the second insulation layer onto the exposed surface of the nanocrystal composite layer by adopting a bonding process. The invention further provides the radiation hardening material, which comprises the device substrate, the insulation buried layers and a device layer, wherein the insulation buried layers comprise the first insulation layer, the second insulation layer and the nanocrystal composite layer. The preparation method and the radiation hardening material, disclosed by the invention, have the advantages of avoiding the injection damage of a traditional ion implantation hardening process to a lattice of the material device layer, avoiding the Gaussian distribution broadening of injection elements in the insulation buried layer, and avoiding the damage, caused by the Gaussian distribution broadening, to the completeness of the insulation buried layer.

Description

technical field [0001] The invention relates to the field of semiconductor material preparation, in particular to the preparation of a radiation-reinforced material with an insulating buried layer. Background technique [0002] Integrated circuits based on silicon-on-insulator (SOI) have lower power consumption, faster speed, higher integration, simpler process, and higher temperature resistance than those based on bulk silicon. Silicon (SOI) integrated circuits are considered to be one of the main technical means to continue Moore's Law in the future. And due to the advantages of the device structure, SOI circuits have stronger resistance to single-event radiation and transient dose rate radiation than bulk silicon circuits, so they are widely used in electronic systems in radiation environments. However, the existence of the insulating buried layer significantly reduces the total dose radiation resistance of SOI devices and circuits. This is because during the radiation ...

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Problems solved by technology

[0005] 1. Direct ion implantation of SOI materials will cause great damage to the lattice structure of the top layer of silicon and is difficult to recover, thereby reducing the lattice quality of the top layer of silicon and even affecting the performance of devices or circuits. Therefore, the size and concentration of nanocrystals Limited by the injection dose parameters, which limits the improvement of the total dose radiation resistance of SOI circuits;

[0006] 2. The implanted ions have a Gaussian distribution in the insulating buried layer, so the implanted ion density at the local position is not enough to form nanocrystals, and becomes an impurity that destroys the integrity of the insulating buried layer

And limited by the Gaussian distribution, it is difficult to accurately control the position and longitudinal distribution uniformity of the nanocrystals formed after annealing, and it is easy to cause a certain degree of interference to the characteristics of SOI devices, and it is difficult to meet the requirements of ultra-deep submicron SOI VLSI

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