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Preparation method of graphene-doped two-dimensional nitrogen and phosphorus

A graphene, nitrogen and phosphorus technology, applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve problems such as high surface free energy of two-dimensional nanomaterials, loss of electrical properties of graphene, structural defects, etc.

Active Publication Date: 2020-07-07
YANAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, due to the high surface free energy of two-dimensional nanomaterials, unconventional methods are often used in the preparation process. For example, high-quality and large-area graphene two-dimensional nanomaterials can be prepared by CVD, but the ideal substrate material single crystal The price of nickel is too expensive, which is an important factor affecting the industrial production of graphene. In addition, the cost is high and the process is complicated
In addition, there is an oxidation-reduction method, the disadvantage of which is that the macro-preparation is easy to cause waste liquid pollution and the prepared graphene has certain defects, for example, topological defects such as five-membered rings and seven-membered rings or structures with -OH groups Defects, these will lead to the loss of some electrical properties of graphene, which will limit the application of graphene

Method used

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  • Preparation method of graphene-doped two-dimensional nitrogen and phosphorus
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  • Preparation method of graphene-doped two-dimensional nitrogen and phosphorus

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Effect test

Embodiment 1

[0046] A preparation method for graphene-doped two-dimensional nitrogen and phosphorus, comprising the following steps:

[0047] S1. Take the inorganic material with layered structure, remove impurities, clean it, dry it in the sun, grind it into powder and pass it through a 20-40 mesh sieve, and then put it into the modification furnace 1 and spread it densely;

[0048] S2. Introduce a mixture of high-temperature water vapor and activated carbon material into the reforming furnace 1, wherein the mass ratio of activated carbon material to layered structure inorganic material is 1:5, and the activated carbon material passes through the layered structure after being tiled with high-temperature water vapor Inorganic material and retention;

[0049] S3. Slowly add water to the modification furnace 1 until the layered structure inorganic material is submerged. After standing for 5 minutes, as long as there is no obvious bubble generation, put an appropriate amount of surfactant int...

Embodiment 2

[0063] A preparation method for graphene-doped two-dimensional nitrogen and phosphorus, comprising the following steps:

[0064] S1. Take the inorganic material with layered structure, remove impurities, clean it, dry it in the sun, grind it into powder and pass it through a 20-40 mesh sieve, and then put it into the modification furnace 1 and spread it densely;

[0065] S2. Introduce a mixture of high-temperature water vapor and activated carbon material into the reforming furnace 1, wherein the mass ratio of activated carbon material to layered structure inorganic material is 1:6, and the activated carbon material passes through the layered structure after being tiled with high-temperature water vapor Inorganic material and retention;

[0066]S3. Slowly add water to the modification furnace 1 until the layered structure inorganic material is submerged. After standing for 8 minutes, subject to the absence of obvious bubbles, put an appropriate amount of surfactant into the wa...

Embodiment 3

[0073] A preparation method for graphene-doped two-dimensional nitrogen and phosphorus, comprising the following steps:

[0074] S1. Take the inorganic material with layered structure, remove impurities, clean it, dry it in the sun, grind it into powder and pass it through a 20-40 mesh sieve, and then put it into the modification furnace 1 and spread it densely;

[0075] S2. Introduce a mixture of high-temperature water vapor and activated carbon material into the reforming furnace 1, wherein the mass ratio of activated carbon material to layered structure inorganic material is 1:8, and the activated carbon material passes through the layered structure after being tiled with high-temperature water vapor Inorganic material and retention;

[0076] S3. Slowly add water to the modification furnace 1 until the layered structure inorganic material is submerged. After standing for 10 minutes, as long as there is no obvious bubble generation, put an appropriate amount of surfactant in...

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Abstract

The invention discloses a preparation method of graphene-doped two-dimensional nitrogen and phosphorus, which belongs to the technical field of graphene preparation. The modification on an inorganic material based on a layered structure can be realized; while high-temperature steam is adopted for physical modification, pores are filled with activated carbon materials; a surfactant is used to perform surface active treatment, air in micropores in the activated carbon material overflows under the extrusion of water to form tiny bubbles; then, huge energy is released by collapsing and exploding in pores of the inorganic material with the layered structure, which has a pore expanding effect on the layered structure inorganic material, the overall porosity and mesoporous fraction are increased,the ion exchange effect of the layered structure inorganic material can be promoted, subsequent nitrogen-phosphorus atoms can be distributed more sufficiently and uniformly, and the performance of graphene-doped two-dimensional nitrogen and phosphorus is remarkably improved.

Description

technical field [0001] The invention relates to the technical field of graphene preparation, in particular to a method for preparing graphene doped with two-dimensional nitrogen and phosphorus. Background technique [0002] Graphene is a new two-dimensional carbon material composed of planar extensions of six-membered rings of C atoms. Good carrier mobility and super large specific surface area make graphene a material star. However, pure graphene is prone to interlayer reattachment due to van der Waals force and Coulomb electrostatic force during use and loses the ability to store charges. Studies have shown that the uniform distribution of free charges on both sides of the graphene sheet can be changed by doping, and the free electrons in a certain range around the dopant atoms can be localized, resulting in bending and wrinkles in the graphene sheet. Wrinkled graphene sheets can provide strong support, thereby avoiding stacking and recombination between graphene sheets,...

Claims

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Application Information

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IPC IPC(8): C01B32/194
CPCC01B32/194Y02P20/133
Inventor 何智慧崔巍王奕璇周芝苹
Owner YANAN UNIV
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