A chemical mechanical polishing fluid
A chemical machinery and polishing liquid technology, applied in polishing compositions containing abrasives, etc., can solve the problems of increasing polyquaternary ammonium salt, inhibiting the polishing speed of tungsten, and not being able to concentrate at high times, so as to reduce dish-shaped depressions and improve polishing effect. , Improve the effect of flatness
Active Publication Date: 2022-05-13
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
View PDF18 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, polyquaternium usually destabilizes colloids and cannot be concentrated at high concentrations
At the same time, increasing the amount of polyquaternium will significantly inhibit the polishing speed of tungsten
In addition, due to surface activity, some polyquaternium salts can also cause foaming, which is detrimental to chemical mechanical polishing
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0025] The advantages of the present invention are further described below through specific examples, but the protection scope of the present invention is not limited only to the following examples.
[0026] Table 1 shows the composition and content of the polishing solutions of Examples 1-9 of the present invention and Comparative Examples 1-3. Prepare the chemical mechanical polishing solution according to the formula in the table, mix well, adjust the pH value to 2.0-2.5 with nitric acid or KOH, add 2.5% hydrogen peroxide before use, and make up the mass percentage to 100% with water to obtain various embodiments of the present invention and comparative example.
[0027] In Table 1, the abrasive particle A is the conventional silica particle PL-3 silica sol of FUSO Company, the abrasive particle B is the PL-3C silica sol of FUSO Company, and its surface is positively charged; the abrasive particle C is the Triethoxysilane-treated silica abrasive particles with a positively...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a kind of chemical mechanical polishing liquid, comprising silica abrasive particles, ferric nitrate, oxidizing agent, organic acid, polyethylene glycol and graft-copolymerized polyethyleneimine, wherein, the surface of the silica abrasive particles has Positive electricity. Compared with the polishing liquid containing polyquaternium salt, the chemical mechanical polishing liquid of the present invention has higher colloidal stability. In addition, the graft-copolymerized polyethyleneimine is added to the polishing liquid of the present invention, which greatly reduces the dish-shaped depression on the surface of the tungsten-containing wafer, improves the flatness of the wafer surface, and further improves the polishing effect.
Description
technical field [0001] The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing liquid for polishing tungsten. Background technique [0002] Chemical mechanical polishing (CMP) is a technique for planarization by chemical action, mechanical action, or a combination of these two actions; it usually consists of a grinding table with a polishing pad, and a grinding head for carrying the chip composition. The grinding head fixes the chip, and then presses the front of the chip on the polishing pad. When performing chemical mechanical polishing, the grinding head moves linearly on the polishing pad or rotates in the same direction as the grinding table; at the same time, it contains the grinding The slurry of the agent is dripped onto the polishing pad and spreads on the polishing pad due to centrifugal action. The chip surface is globally planarized under the dual action of mechanics and chemistry. [0003] Metal tu...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 王晨何华锋李星
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD