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Chemical mechanical polishing solution

A chemical-mechanical and polishing liquid technology, applied in polishing compositions containing abrasives, etc., can solve the problems of increasing polyquaternium, harmful chemical-mechanical polishing, and foaming

Active Publication Date: 2020-07-07
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, polyquaternium usually destabilizes colloids and cannot be concentrated at high concentrations
At the same time, increasing the amount of polyquaternium will significantly inhibit the polishing speed of tungsten
In addition, due to surface activity, some polyquaternium salts can also cause foaming, which is detrimental to chemical mechanical polishing

Method used

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Embodiment Construction

[0025] The advantages of the present invention are further described below through specific examples, but the protection scope of the present invention is not limited only to the following examples.

[0026] Table 1 shows the composition and content of the polishing solutions of Examples 1-9 of the present invention and Comparative Examples 1-3. Prepare the chemical mechanical polishing solution according to the formula in the table, mix well, adjust the pH value to 2.0-2.5 with nitric acid or KOH, add 2.5% hydrogen peroxide before use, and make up the mass percentage to 100% with water to obtain various embodiments of the present invention and comparative example.

[0027] In Table 1, the abrasive particle A is the conventional silica particle PL-3 silica sol of FUSO Company, the abrasive particle B is the PL-3C silica sol of FUSO Company, and its surface is positively charged; the abrasive particle C is the Triethoxysilane-treated silica abrasive particles with a positively...

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Abstract

The invention provides a chemical mechanical polishing solution, which comprises silicon dioxide grinding particles, ferric nitrate, an oxidizing agent, organic acid, polyethylene glycol and graft copolymerization polyethyleneimine, wherein the surfaces of the silicon dioxide grinding particles are positively charged. Compared with a polishing solution containing polyquaternium, the chemical mechanical polishing solution provided by the invention has high colloid stability. Besides, the grafted and copolymerized polyethyleneimine is added into the polishing solution, so that dish-shaped recesses in the surface of the tungsten-containing wafer are greatly reduced, the surface flatness of the wafer is improved, and the polishing effect is further improved.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing liquid for polishing tungsten. Background technique [0002] Chemical mechanical polishing (CMP) is a technique for planarization by chemical action, mechanical action, or a combination of these two actions; it usually consists of a grinding table with a polishing pad, and a grinding head for carrying the chip composition. The grinding head fixes the chip, and then presses the front of the chip on the polishing pad. When performing chemical mechanical polishing, the grinding head moves linearly on the polishing pad or rotates in the same direction as the grinding table; at the same time, it contains the grinding The slurry of the agent is dripped onto the polishing pad and spreads on the polishing pad due to centrifugal action. The chip surface is globally planarized under the dual action of mechanics and chemistry. [0003] Metal tu...

Claims

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Application Information

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IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 王晨何华锋李星
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD