Unlock instant, AI-driven research and patent intelligence for your innovation.

Mask plate and exposure method

An exposure method and mask technology, which are applied in the field of semiconductor manufacturing, can solve the problems of inconsistent light intensity of the edge pattern of the splicing area, and achieve the effects of avoiding inconsistent light intensity of the pattern, reducing chromatic aberration, and improving uniformity

Active Publication Date: 2021-12-31
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to provide a mask plate and exposure method to solve the problem of inconsistency of the pattern light intensity at the edge of the splicing area in the existing PSS pattern production process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mask plate and exposure method
  • Mask plate and exposure method
  • Mask plate and exposure method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] see Figure 4-Figure 5 , which is a schematic diagram of a mask plate provided in this embodiment, such as Figure 4 and Figure 5 As shown, the mask plate is used to expose an LED substrate to form a PSS pattern. The mask plate includes a substrate and a mask pattern formed on the substrate. The mask pattern includes a plurality of A polygonal unit figure 1, a plurality of the unit figures 1 are regularly spliced ​​so that the overall mask figure is in the shape of a gear. The LED base adopts light-transmitting materials, for example, it can be sapphire, silicon carbide (SiC), zinc oxide (ZnO), spinel (MgAL 2 o 4 )Wait. In this embodiment, the LED substrate is a sapphire substrate.

[0038] Specifically, such as Figure 4 and Figure 5 As shown, the mask pattern includes a plurality of polygonal unit patterns 1. In this embodiment, the shape of the unit pattern 1 is a regular hexagon, and a plurality of the unit patterns 1 are regularly spliced ​​to form a Fig...

Embodiment 2

[0049] Such as Figure 10 As shown, the difference from Embodiment 1 is that in this embodiment, after the centers of the opaque parts 12 on the outer edge of the mask pattern (the outermost circle of the exposure field of view) are sequentially connected, a six-dimensional pattern can be obtained. Each side of the hexagon is equal. In this embodiment, each side of the hexagon connects the centers of the three opaque parts 12, and the inside of the hexagon (the sub-outer circle of the exposure field of view) also has 6 complete opaque parts 12, and the centers of these 6 complete opaque parts 12 can also form a hexagon with a smaller size after being connected in sequence. In the hexagon-like mask pattern, the characteristic angle a' of the hexagon-like shape can be 50°-70°, preferably 57.8°, so as to better meet the characteristics of the hexagon-like shape.

[0050] Further, the mask pattern in this embodiment has five rows of opaque portions 12 in the Y direction, and the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
angleaaaaaaaaaa
transmittivityaaaaaaaaaa
transmittivityaaaaaaaaaa
Login to View More

Abstract

The invention provides a mask plate and an exposure method. The mask pattern is formed by a plurality of polygonal unit patterns regularly arranged, and each of the unit patterns includes an opaque portion and surrounding For the light-transmitting part of the opaque part, after exposing several exposure regions of the LED substrate through the mask pattern, an exposure pattern can be formed in each of the exposure regions, and a plurality of the exposure patterns are regularly spliced And constitute described PSS figure, because described PSS figure is spliced ​​by identical exposure pattern, the figure size and style of each splicing area are consistent, solve the problem of inconsistent light intensity of the edge figure of splicing area, have promoted the edge figure Uniformity, reducing the degree of chromatic aberration.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a mask plate and an exposure method. Background technique [0002] Patterned Sapphire Substrate (PSS), that is, a mask for dry etching is grown on the sapphire substrate, a PSS pattern is formed by a standard photolithography process, the sapphire is etched by ICP etching technology, and the mask is removed , and then grow GaN material on it, so that the vertical epitaxy of the GaN material becomes lateral epitaxy, on the one hand, it can effectively reduce the dislocation density of the GaN epitaxial material, thereby reducing the non-radiative recombination of the active region and reducing the reverse leakage current , improve the life of the LED; on the other hand, the light emitted by the active area is scattered by the GaN and sapphire substrate interface multiple times, which changes the exit angle of the total reflection light and increases the probabi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/76G03F7/20
CPCG03F1/76G03F7/70283
Inventor 任书铭章磊李成立
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD