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Mask plate and exposure method

An exposure method and mask technology, applied in the field of semiconductor manufacturing, can solve the problem of inconsistent light intensity of edge patterns in the splicing area, etc.

Active Publication Date: 2020-07-07
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The object of the present invention is to provide a kind of mask plate and exposure method, to solve the problem of the inconsistency of the pattern light intensity of splicing area edge in the existing PSS figure making process

Method used

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  • Mask plate and exposure method
  • Mask plate and exposure method
  • Mask plate and exposure method

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Experimental program
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Embodiment 1

[0037] see Figure 4-Figure 5 , which is a schematic diagram of a mask plate provided in this embodiment, such as image 3 and Figure 4 As shown, the mask plate is used to expose an LED substrate to form a PSS pattern. The mask plate includes a substrate and a mask pattern formed on the substrate. The mask pattern includes a plurality of A polygonal unit figure 1, a plurality of the unit figures 1 are regularly spliced ​​so that the overall mask figure is in the shape of a gear. The LED substrate adopts light-transmitting materials, for example, it can be sapphire, silicon carbide (SiC), zinc oxide (ZnO), spinel (MgAL2O4) and the like. In this embodiment, the LED substrate is a sapphire substrate.

[0038] Specifically, such as Figure 4 and Figure 5 As shown, the mask pattern includes a plurality of polygonal unit patterns 1. In this embodiment, the shape of the unit pattern 1 is a regular hexagon, and a plurality of the unit patterns 1 are spliced ​​regularly to form...

Embodiment 2

[0049] like Figure 10 As shown, the difference from Embodiment 1 is that in this embodiment, after the centers of the opaque parts 12 on the outer edge of the mask pattern (the outermost circle of the exposure field of view) are sequentially connected, a six-dimensional pattern can be obtained. Each side of the hexagon is equal. In this embodiment, each side of the hexagon connects the centers of the three opaque parts 12, and the inside of the hexagon (the sub-outer circle of the exposure field of view) also has 5 complete opaque parts 12, and the centers of these 5 complete opaque parts 12 can form a hexagon with a smaller size after being connected in sequence. In the hexagon-like mask pattern, the characteristic angle a' of the hexagon-like shape can be 50°-70°, preferably 57.8°, so as to better meet the characteristics of the hexagon-like shape.

[0050] Further, the mask pattern in this embodiment has five rows of opaque portions 12 in the Y direction, and the opaque p...

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Abstract

The invention provides a mask plate and an exposure method. The mask pattern is formed by regularly arranging a plurality of polygonal unit patterns; each unit pattern comprises a light-proof part anda light-transmitting part surrounding the light-proof part; after a plurality of exposure areas of the LED substrate are exposed through the mask pattern, an exposure pattern can be formed in each exposure region; and the plurality of exposure pattern rules are spliced to form the PSS pattern, and the PSS pattern is formed by splicing the same exposure pattern, so that the pattern size and the pattern style of each splicing region are consistent, the problem of inconsistent light intensity of the edge pattern of the splicing region is solved, the uniformity of the edge pattern is improved, and the degree of color difference is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a mask plate and an exposure method. Background technique [0002] Patterned Sapphire Substrate (PSS), that is, a mask for dry etching is grown on the sapphire substrate, a PSS pattern is formed by a standard photolithography process, the sapphire is etched by ICP etching technology, and the mask is removed , and then grow GaN material on it, so that the vertical epitaxy of the GaN material becomes lateral epitaxy, on the one hand, it can effectively reduce the dislocation density of the GaN epitaxial material, thereby reducing the non-radiative recombination of the active region and reducing the reverse leakage current , improve the life of the LED; on the other hand, the light emitted by the active area is scattered by the GaN and sapphire substrate interface multiple times, which changes the exit angle of the total reflection light and increases the probabi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/76G03F7/20
CPCG03F1/76G03F7/70283
Inventor 任书铭章磊李成立
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD