A kind of semiconductor device and its preparation method

Abstract

The embodiment of the present invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate; a multilayer semiconductor layer located on one side of the substrate, and the multilayer semiconductor layer includes a buffer layer and a channel layer located on one side of the substrate in sequence. and a potential barrier layer; the source, gate and drain located on the side of the multilayer semiconductor layer away from the substrate, the gate located between the source and the drain; located in the multilayer semiconductor layer and located at the drain far away from the gate The lower surface of the P-type material layer extends to the surface of the buffer layer close to the channel layer or extends to the inside of the buffer layer, and the P-type material layer is electrically connected to the drain. By setting the P-type material layer to be electrically connected to the drain, the P-type material layer injects holes into the buffer layer under forward bias, neutralizes the trapped electrons in the buffer layer due to lattice defects or doping, and improves the electron density. The speed of detachment from the buffer layer increases the saturation current of the semiconductor device, reduces the dynamic on-resistance of the semiconductor device, and improves the performance of the semiconductor device.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In recent years, GaN-based high electron mobility transistors (HEMTs) have developed rapidly, and the wurtzite structure AlGaN / GaN HEMTs have the best development prospects. HEMTs may also be referred to as Modulation Doped Field Effect Transistors (MODFETs) or Heterojunction Field Effect Transistors (HFETs). Its on-resistance and parasitic capacitance are small, the switching speed is fast, and the thermal stability is good. It is a high-temperature, high-frequency and high-power device that is currently booming. [0003] At present, GaN-based HEMT devices have entered the practical stage and play a key role, but there are still many reliability problems, which seriously restrict the popularization and further development of devices. Among them, because the...

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Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a semiconductor device and its preparation method to solve the technical problems in the prior art that the semiconductor device has a large dynamic on-resistance and a small saturation current due to electrons trapped by defects in the buffer layer.

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