High-voltage-resistant bigrid transverse HEMT device and preparation method thereof

Abstract

The invention relates to a high-voltage-resistant bigrid transverse HEMT device, which comprises a buffer layer positioned on a substrate, and a laminated layer consisting of a GaN channel layer, an AlN insertion layer and an AlGaN barrier layer which are sequentially laminated on the buffer layer, and also comprises a p-type buried layer, a grid positioned on the p-type buried layer, and a source / drain electrode and an inverted L-shaped grid which are positioned on the barrier layer; in the thickness direction, the p-type buried layer extends by a certain depth from the surface, close to the channel layer, of the buffer layer to the side, away from the channel layer, of the buffer layer; the source and the drain are located on the surface of the barrier layer; a gate groove is formed between the source electrode and the drain electrode, and the inverted L-shaped gate is located in the gate groove and extends towards one side of the drain electrode; and in the length direction, the p-type buried layer extends from the position below the grid electrode to the position below the grid groove. Through the introduction of the p-type buried layer and the structural arrangement of double gates combined with the AlGaN / AlN / GaN heterojunction, the HEMT device with low on-resistance, high saturation current, high breakdown voltage and low leakage current is obtained.

Description

technical field [0001] The invention relates to the technical field of HEMT devices, in particular to a high withstand voltage double-gate lateral HEMT device and a preparation method thereof. Background technique [0002] AlGaN / GaN HEMT devices have surpassed Si-based power devices in terms of high power, high operating temperature, and strong radiation resistance. They not only have the advantages of GaN materials, but also AlGaN / GaN heterojunctions. Polarized electric fields, capable of forming a two-dimensional electron gas (2DEG) with high mobility and high carrier areal density, have received great attention in the field of power electronics. [0003] Although AlGaN / GaN HEMT devices have high withstand voltage characteristics in theory, the breakdown voltage of actual devices is only a few hundred volts, which is still far from the theoretical withstand voltage limit of GaN materials, which limits the development of GaN-based HEMT devices. large-scale application. Th...

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Problems solved by technology

In the off state, electrons injected from the source pass through the buffer layer to the drain to form a current channel, causing premature breakdown of the device

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