Radio-frequency LDMOS (Laterally Diffused Metal Oxide Semiconductor) device and manufacturing method thereof

A device and radio frequency technology, which is applied in the field of semiconductor integrated circuit manufacturing, can solve the problems that the drift region 4 cannot be fully depleted, the breakdown voltage increases, the drift region decreases, etc., and achieves the reduction of hot carrier injection capability, increase of drive current, Effect of Reducing On-Resistance
CN104538441AActive Publication Date: 2015-04-22SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Publication Date
2015-04-22

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Abstract

The invention discloses a radio-frequency LDMOS (Laterally Diffused Metal Oxide Semiconductor) device. A drift region is in a nonuniform structure formed by a first ion injection region and a second ion injection region; the first ion injection region is self-aligned to a polysilicon gate; the second ion injection region is defined by photoetching and is at a distance from the polysilicon gate; a crossover region of the first ion injection region and the second ion injection region has higher doping concentration which can improve driving current of the device and reduce switch-on resistance of the device; the lower doping concentration of the first ion injection region can reduce the intensity of an electric field on the edge of the polysilicon gate, improve breakdown voltage of the device, reduce injection capacity of a hot carrier on the edge of the polysilicon gate and improve robustness of the device; and the lower doping concentration and great depth of the second ion injection region can reduce output capacitance of the device. The invention further discloses a manufacturing method of the radio-frequency LDMOS device.
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Description

technical field

[0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a radio frequency (RF) lateral field effect transistor (LDMOS) device; the invention also relates to a method for manufacturing the radio frequency LDMOS device. Background technique

[0002] With the advent of the 3G era, more and more communication fields require the development of higher power RF devices. Due to its very high output power, the RF lateral double-diffused field effect transistor has been widely used in the power amplification of portable wireless base stations as early as the 1990s, and its application frequency is 900MHz to 3.8GHz. Compared with traditional silicon-based bipolar transistors, RFLDMOS has better linearity, higher power and gain. Today, RFLDMOS is more popular than bipolar, and GaAs devices.

[0003] Such as figure 1 As shown, it is a schematic structural diagram of an existing radio frequency LDMOS device. Taking a...

Claims

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