The invention provides a schottky diode controlled by a junction barrier having a superposed P<+>-P structure. The schottky diode comprises an N<+> type substrate zone (100), an N type drift region (101), P<+> portions of the superposed P<+>-P structure (102), an anodic electrode (104), a cathodic electrode (105), a silicon dioxide layer (106), a schottky contact (107), and an ohmic contact (108). Besides, the schottky diode also includes P portions of the superposed P<+>-P structure (103), wherein the P<+> window portions of the superposed P<+>-P structure (102) is on the P window portions of the superposed P<+>-P structure (103). According to the invention, before the P<+> portions of the superposed P<+>-P structure in an area are formed, the P portions of the superposed P<+>-P structure in an area are formed, wherein the P portions are separated from each other and the structure of P portions is similar to the netted structure of a junction barrier schottky (JBS). Therefore, reverse withstand voltage of the JBS diode device can be improved and the output capacitance can be reduced, on the condition that the forward conduction characteristic of the device is not sacrificed. The process of the invention has the strong feasibility of implementation, and the application requirement of the power electronic system can be satisfied easily according to the invention.