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MEMS structure

A diaphragm and outer ring technology, applied in the field of MEMS structures, can solve problems such as diaphragm warpage, low sensitivity of piezoelectric MEMS structures, and restrictions on the development of MEMS piezoelectric microphones

Pending Publication Date: 2020-07-10
ANHUI ORINFIN ACOUSTIC SCI&TECH CO LTD
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Problems solved by technology

At the same time, compared with condenser microphones, there are advantages such as no need for bias voltage, wide operating temperature range, dustproof, waterproof, etc., but its sensitivity is relatively low, which restricts the development of MEMS piezoelectric microphones.
Moreover, when the diaphragm size of the MEMS piezoelectric microphone is large, it is easy to cause the diaphragm to warp
[0003] For the problems of how to improve the low sensitivity of the piezoelectric MEMS structure and the easy warping of the diaphragm in related technologies, no effective solution has been proposed so far.

Method used

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[0028] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments in this application belong to the protection scope of this application.

[0029] see figure 1 , according to an embodiment of the present application, a MEMS structure is provided, which can be but not limited to be used in sensors such as microphones or microphones, or other actuators. In some embodiments, the MEMS structure includes a substrate 10 and a piezoelectric composite vibration layer 20 .

[0030] see figure 2 , the substrate 10 includes an outer ring body 11 and a support plate 12 disposed inside the outer ring body 11 and connected to the outer ring body 11 , wherein a cavit...

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Abstract

The invention discloses an MEMS structure, which comprises a substrate comprising an outer ring body and a support plate arranged in the outer ring body and connected with the outer ring body, and characterized in that a cavity is formed between the support plate and the outer ring body; and a piezoelectric composite vibration layer formed above the substrate, and comprising a fixed end connectedwith the support plate and a free end suspended above the cavity. Therefore, compared with the technical scheme that the MEMS structure does not contain the support plates, the length of a cantileverbeam from the fixed end to the free end is shortened by arranging one or more support plates, so that the warping probability of the diaphragm of the piezoelectric composite vibration layer is reduced. Moreover, the process difficulty of the MEMS structure is reduced, and the yield and the stability of the device are improved. In addition, a plurality of cantilever beam structures in the piezoelectric composite vibration layer effectively improve the sensitivity.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular, relates to a MEMS (short for MicroelectroMechanical Systems, microelectromechanical systems) structure. Background technique [0002] MEMS microphones (microphones) mainly include two types: capacitive and piezoelectric. MEMS piezoelectric microphone is a microphone prepared by microelectromechanical system technology and piezoelectric thin film technology. Due to the use of semiconductor planar technology and bulk silicon processing technology, it has small size, small volume and good consistency. At the same time, compared with condenser microphones, there are advantages such as no need for bias voltage, wide operating temperature range, dustproof, waterproof, etc., but its sensitivity is relatively low, which restricts the development of MEMS piezoelectric microphones. Moreover, when the diaphragm size of the MEMS piezoelectric microphone is large, it is ea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04R19/00H04R19/04
CPCH04R19/005H04R19/04
Inventor 刘端
Owner ANHUI ORINFIN ACOUSTIC SCI&TECH CO LTD
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