Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quantum dot light-emitting device, preparation method thereof, display panel and display device

A quantum dot luminescence, quantum dot technology, applied in the direction of organic light-emitting devices, organic light-emitting device parameters, semiconductor/solid-state device manufacturing, etc., can solve the problems of reducing and affecting the quantum yield of photoluminescence, so as to avoid spectral red shift, Avoid non-radiative fluorescence resonance energy transfer, increase the effect of the gap

Active Publication Date: 2020-07-14
BOE TECH GRP CO LTD
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with the solution state, the distance between the quantum dots in the quantum dot film is extremely short, and FRET is very easy to occur, resulting in a red shift of the luminescence peak and a decrease in the photoluminescence quantum yield (Photoluminescence quantum yield, PLQY)
[0004] In summary, quantum dot films in the prior art are prone to FRET, which affects the photoluminescence quantum yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot light-emitting device, preparation method thereof, display panel and display device
  • Quantum dot light-emitting device, preparation method thereof, display panel and display device
  • Quantum dot light-emitting device, preparation method thereof, display panel and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The embodiment of the present application provides a quantum dot light-emitting device, such as Figure 1 ~ Figure 2 As shown, the quantum dot light-emitting device includes a quantum dot light-emitting layer 1; the quantum dot light-emitting layer 1 includes: light-emitting quantum dots 2 and a semiconductor spacer material 3 mixed with the light-emitting quantum dots 2; the semiconductor spacer material 3 The energy level spans the forbidden band of the luminescent quantum dot 2 .

[0035] In the quantum dot light-emitting device provided in the embodiment of the present application, the quantum dot light-emitting layer is provided with a semiconductor spacer material, and the semiconductor spacer material is mixed with the light-emitting quantum dots, so that the gap between the light-emitting quantum dots can be increased, and the abnormal noise caused by the proximity of the light-emitting quantum dots can be reduced. Radiative fluorescence resonance energy transfe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a quantum dot light-emitting device, a preparation method thereof, a display panel and a display device and aims to reduce fluorescence resonance energy transfer and improve photoluminescence quantum yield. According to the embodiments of the invention, the quantum dot light-emitting device comprises a quantum dot light-emitting layer, wherein the quantum dot light-emittinglayer comprises light-emitting quantum dots and a semiconductor spacer material mixed with the light-emitting quantum dots; the energy level of the semiconductor spacer material spans the forbidden band of the light emitting quantum dots.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a quantum dot light-emitting device and a preparation method thereof, a display panel, and a display device. Background technique [0002] With the development of quantum dot materials, the continuous optimization of device structures, and the continuous deepening of research on effective charge transport, quantum dot electroluminescent diodes (Quantum Dot Light Emitting Diode, QLED) will surpass photoluminescent quantum dot brightening. Membrane and quantum dot color filters are expected to become the next generation mainstream display technology. [0003] In the thin film state, the non-radiative fluorescence resonance energy transfer (Fluorescence Resonance Energy Transfer, FRET) between quantum dots is a factor that changes the properties of quantum dots. When the distance between the donor and the acceptor is getting closer and the donor emits and accepts The gre...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/50H01L51/56H01L27/32
CPCH10K59/10H10K50/11H10K2101/40H10K50/115H10K50/125H10K2101/00H10K71/00
Inventor 冯靖雯
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com