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Repetition frequency nanosecond pulse generation circuit based on drift step recovery diode

A technology for recovering diodes and nanosecond pulses, applied in electric pulse generator circuits, pulse generation, electric pulse generation, etc., can solve the problems of low output pulse amplitude, high repetition frequency and high amplitude, etc., to achieve Increased pulse amplitude, low loss, and stable performance

Active Publication Date: 2020-07-17
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing high-voltage narrow pulse technology based on DSRD has the problem that the output pulse amplitude is low under the condition of high repetition frequency, and the high repetition frequency and high amplitude cannot be achieved at the same time. Higher performance requirements for high values, high repetition rates, and narrow pulses

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  • Repetition frequency nanosecond pulse generation circuit based on drift step recovery diode
  • Repetition frequency nanosecond pulse generation circuit based on drift step recovery diode

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Embodiment Construction

[0018] The present invention will be described in further detail below in conjunction with the accompanying drawings:

[0019] reference figure 1 The re-frequency nanosecond pulse generating circuit based on the drift step recovery diode of the present invention includes a charging circuit, a primary pulse forming circuit and a pulse forming circuit, wherein the pulse forming circuit includes a saturable pulse transformer SPT, a secondary storage Capacitance C 2 , DSRD switch component DSRD and resistive load R L ; The output terminal of the charging circuit is connected through the input terminal of the primary pulse forming circuit, and the output terminal of the primary pulse forming circuit is connected with the primary winding of the saturable pulse transformer SPT. One end of the secondary winding in the saturable pulse transformer SPT is connected to the secondary Grade energy storage capacitor C 2 Is connected to one end, the secondary energy storage capacitor C 2 The othe...

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Abstract

The invention discloses a repetition frequency nanosecond pulse generation circuit based on a drift step recovery diode. The output end of a charging loop is connected with the input end of a primarypulse forming loop; the output end of the primary pulse forming loop is connected with a primary winding of a saturable pulse transformer; one end of a secondary winding in the saturable pulse transformer is connected with one end of a secondary energy storage capacitor; the other end of the secondary energy storage capacitor is connected with the positive electrode of a DSRD switch assembly and one end of a resistive load; and the other end of the secondary winding in the saturable pulse transformer, the negative electrode of the DSRD switch assembly and the other end of the resistive load are all grounded. The circuit can effectively solve the problems of high amplitude output and high repetition frequency work of a DSRD-based pulse generation circuit in the prior art.

Description

Technical field [0001] The invention belongs to the field of semiconductor switches and pulse power sources, and relates to a repetitive frequency nanosecond pulse generating circuit based on a drift step recovery diode. Background technique [0002] High repetition rate pulse power device is an important development direction of pulse power technology, which is widely used in high power microwave, high power laser, ultra-wideband radar and other fields. For most pulse power devices, the parameter characteristics of switching devices limit key indicators such as peak power, working repetition frequency and service life. In addition, the stability and reliability of the pulse waveform output by the device usually depend on the performance of the switch. [0003] Traditional power switches are mostly gas devices, such as high-pressure gas spark switches, hydrogen thyratrons, vacuum trigger switches, etc. They are characterized by high power, mature design principles, and wide applic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K3/021H03K3/012H03K17/567
CPCH03K3/021H03K3/012H03K17/567Y02B70/10
Inventor 谢彦召赖雨辰王海洋
Owner XI AN JIAOTONG UNIV
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