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Method for repairing defects of perovskite thin film

A thin film defect and perovskite technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of raw material residue, non-dense film, poor stability of perovskite film, etc., to improve stability, improve compactness, The effect of reducing holes

Active Publication Date: 2020-07-21
HANGZHOU MICROQUANTA SEMICON CO LTD
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  • Application Information

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Problems solved by technology

However, in the process of large-scale preparation of perovskite thin film batteries, the prepared perovskite thin film will have many defects due to unstable factors such as environment and process: such as impurities, holes, and unreacted raw material residues in the perovskite thin film, etc. , and there are more pores in the perovskite film, which leads to the lack of density of the film and the poor stability of the perovskite film prepared in a large area.
However, this method can only clear the impurity defects on the perovskite film and adjust the morphology of the perovskite film, but cannot solve the hole defects of the perovskite and the residue of unreacted perovskite impurities.
Moreover, the perovskite film treated with a large amount of solvent may leave some solvent in the perovskite film, which is not conducive to the stability of the perovskite film.

Method used

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  • Method for repairing defects of perovskite thin film
  • Method for repairing defects of perovskite thin film
  • Method for repairing defects of perovskite thin film

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Embodiment 1

[0051] Please refer to figure 2 As shown in the photo of the appearance of the perovskite film prepared on the substrate, the method of the present invention is not used for surface repair treatment, and it can be seen that there are obvious hole defects and dust impurity particles on the perovskite film.

[0052] Please refer to figure 1 As shown, the above-mentioned substrate for preparing the perovskite film is repaired using a method for repairing perovskite film defects of the present invention, which specifically includes the following steps:

[0053] Step 1, such as figure 1 As shown in (1), put the prepared large-area perovskite film 101-1 into an anhydrous isopropanol solution 102 and heat it to 40°C for 30 minutes to obtain a clean perovskite film 101-1 .

[0054] Step 2, such as figure 1 As shown in (2), in a dry air environment, place the cleaned perovskite film 101 on a hot stage 103 at a temperature of 100° C. and heat for 10 minutes to obtain a dried perovs...

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Abstract

The invention relates to a method for repairing defects of a perovskite thin film, which comprises the following steps of: 1, pretreating a prepared perovskite thin film, spraying a perovskite precursor solution on the surface of the perovskite thin film by adopting a spraying method, and performing air drying treatment or low-temperature drying treatment on the sprayed perovskite thin film; 2, processing the air-dried perovskite thin film by using hot steam; and 3, cleaning the perovskite thin film by using a cleaning solvent, and carrying out solvent drying on the cleaned perovskite thin film to obtain the repaired perovskite thin film. According to the method, the defects of the large-area prepared perovskite thin film are repaired through adoption of a series of treatment methods, themorphology of the perovskite thin film is adjusted, and the stability of the perovskite thin film is improved.

Description

technical field [0001] The invention belongs to the technical field of perovskite film preparation, in particular to a method for repairing defects of perovskite film. Background technique [0002] Perovskite thin-film solar cells have broad prospects in the field of solar power generation due to their high photoelectric conversion efficiency, simple fabrication process, and low fabrication cost. However, in the process of large-scale preparation of perovskite thin film batteries, the prepared perovskite thin film will have many defects due to unstable factors such as environment and process: such as impurities, holes, and unreacted raw material residues in the perovskite thin film, etc. , and there are many pores in the perovskite film, which leads to the lack of density of the film and the poor stability of the perovskite film prepared in a large area. [0003] At present, there are more perovskite film post-processing equipment to optimize perovskite film defects. For ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48
CPCH10K71/15H10K71/12
Inventor 不公告发明人
Owner HANGZHOU MICROQUANTA SEMICON CO LTD
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