Aluminum-scandium alloy target with high scandium content and preparation method thereof

Abstract

The invention discloses an aluminum-scandium alloy target with high scandium content and a preparation method thereof. The method comprises the steps of selecting metal aluminum and metal scandium, and carrying out proportioning; melting the metal scandium, then adding the metal aluminum into the metal scandium for smelting step by step in multiple times, and carrying out cooling after melting inmultiple times to obtain an aluminum-scandium alloy; performing ball milling and vacuum drying on the aluminum-scandium alloy to obtain alloy powder, and then performing pre-pressing and vacuum sintering to obtain an aluminum-scandium alloy target blank; and performing hot deformation machining on the obtained aluminum-scandium alloy target blank to obtain the aluminum-scandium alloy target, wherein the hot deformation machining comprises hot forging, hot rolling and finish machining. By adopting the method, the aluminum-scandium alloy target is more uniform in structure and chemical composition, higher in relative density which is 99.0% or more, finer in grain size and higher in ductility; by adopting the method, the defects of shrinkage cavities and porosity are also reduced; the raw material cost is saved; the problems of large alloy brittleness and incapability of target machining are solved; and the requirements of wiring materials for large-scale integrated circuits can be met.

Description

technical field [0001] The invention relates to the technical field of aluminum alloy target processing and preparation, in particular to an aluminum-scandium alloy target with high scandium content and a preparation method thereof. Background technique [0002] Thin film materials are the key support for the manufacture of electronic devices. Among them, aluminum thin films have become key materials in the fields of integrated circuits, discrete devices, and liquid crystal displays due to their advantages such as low resistivity, easy deposition, easy etching, and mature technology. With the development of electronic information technology in the direction of high performance, multi-function, large capacity, and miniaturization, the integration of semiconductor chips is getting higher and higher, and the width of integrated circuit metal interconnection lines is continuously decreasing. The problem of migration and stress migration is prominent, which can no longer meet the...

AI Technical Summary

Problems solved by technology

However, the preparation methods disclosed in the above-mentioned prior art all need to use expensive metal powder as raw material, the cost is high, and metal scandium powder and aluminum powder are easy to oxidize, and the oxygen content is high, which affects the purity of the product.

Moreover, although the powder metallurgy method can prepare aluminum-scandium alloys with high scandium content, there are many pores in the powder sintered alloy. Although the material is very dense as a whole, these pores will still cause many disadvantages to the target sputtering process and film quality. Impact

[0005] The Chinese patent CN104805406A (public date 2015.07.29) in the prior art discloses an aluminum-scandium rotating target and its preparation method, and specifically discloses the use of an arc spraying method to spray an alloy bottom layer on a stainless steel substrate containing an alloy bottom layer Use the controlled atmosphere cold spraying method to spray aluminum scandium powder to prepare the rotating target; the thickness of the aluminum scandium rotating target prepared by the above method is only 3-15 mm, and the density is 97%, and its application range is also limited, that is, the application is limited