A silicon carbide coaxial ultraviolet photodetector and its preparation method

Abstract

A silicon carbide coaxial ultraviolet photodetector and a preparation method thereof relate to an ultraviolet photodetector. The silicon carbide coaxial ultraviolet photodetector is equipped with a silicon carbide n+ type substrate with a high doping concentration, a homogeneous n-type buffer layer is set on the silicon surface of the n+ type substrate, and a cylinder is set upward in the center of the n-type buffer layer Shaped silicon carbide n-type layer, with the axis of the n-type layer as the center, a cylindrical tubular silicon carbide low-doped i-type absorber layer and a cylindrical tubular silicon carbide p+-type ohmic contact layer are arranged in sequence, and the p+-type ohmic contact layers are all arranged on the i-type The upper part of the absorber layer is not in contact with the n+ type substrate, and the entire device forms a p-i-n structure from the outside to the inside in the horizontal direction. SiO 2 A passivation layer: an n+ type electrode is provided on the back of the n+ type substrate, and a p+ type electrode is provided on the upper surface of the p+ type ohmic contact layer side. Better device responsivity can be obtained, and the efficiency of collecting photogenerated carriers can be improved.

Description

technical field [0001] The invention relates to an ultraviolet photodetector, in particular to a silicon carbide coaxial ultraviolet photodetector capable of significantly improving the absorption and responsivity of ultraviolet solar-blind short-wave band signals and a preparation method thereof. Background technique [0002] As ultraviolet rays are more and more widely used in industrial manufacturing, medical sanitation and disinfection, and environmental monitoring, the detection technology of ultraviolet light band signals, especially ultraviolet light solar-blind band (wavelength 0.20-0.28μm) signals is gradually It has been paid attention to, and ultraviolet photodetectors of different materials and structures have been developed one after another. Among them, ultraviolet photodetectors of semiconductor materials have excellent characteristics such as low voltage, small size, and long life, which have become research hotspots. [0003] At present, the technology of si...

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Problems solved by technology

[0004] The purpose of the present invention is to solve the shortcomings of the p+ layer in the silicon carbide ultraviolet photodetector with the conventional vertical sandwich p-i-n structure that the absorption of the ultraviolet incident signal leads to a decrease in responsivity and quantum efficiency, and provide a device that can improve the absorption of the incident light and the Carrier conversion, a silicon carbide coaxial ultraviolet photodetector and its preparation method for improving the detection ability of the detector

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