CuInS2 thin film and preparation process thereof

A technology of cuins2 and thin film, which is applied in the field of CuInS2 thin film and its preparation process, can solve the problems of rough film, poor flatness, strong corrosion, etc., and achieve the effect of improved film quality, uniform thickness and low production cost

Inactive Publication Date: 2020-08-04
UNIV OF SCI & TECH BEIJING
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The existing one-step electrodeposition process usually uses a chloride-based electrolyte, but it is highly corrosive, and if it is not properly controlled, chlorine gas will be precipitated on the surface of the cathode material, causing trouble
In addition, because the chloride ion reduces the cathode polarization and activates the electrode reaction, the obtained film is relatively rough and has poor flatness.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CuInS2 thin film and preparation process thereof
  • CuInS2 thin film and preparation process thereof
  • CuInS2 thin film and preparation process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to better understand the technical solutions of the present invention, the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0030] It should be clear that the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0031] Terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. As used in the embodiments of the present invention and the appended claims, the singular forms "a", "said" and "the" are also intended to include the plural forms unless the context clearly indicates otherwise.

[0032] Compared with the chloride-based electrol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
electric potential / voltageaaaaaaaaaa
sizeaaaaaaaaaa
Login to view more

Abstract

The invention provides a CuInS2 thin film and a preparation process thereof, and relates to the technical field of thin film materials. The stoichiometric ratio of each component of the thin film is close to an ideal stoichiometric ratio; the thin film is flat in appearance, uniform in thickness and compact in tissue; and a forbidden bandwidth of the thin film is close to the optimal forbidden bandwidth of an ideal solar cell photoelectric material; the stoichiometric ratio of the components of the film is Cu: In: S (at%) = 1: 1.082: 1.965; the grain size is 0.4 to 1.3 micros; the forbidden bandwidth Eg is 1.459 eV; a constant-potential one-step electro-deposition method is adopted for preparation, and a Cu-In-S three-electrode system and sulfate system electrolyte are adopted during electro-deposition; and the electrolyte comprises copper sulfate, indium sulfate, sodium thiosulfate, potassium hydrogen phthalate, lauryl sodium sulfate and water. The technical scheme is suitable for thepreparation process of the CuInS2 thin film.

Description

【Technical field】 [0001] The invention relates to the technical field of thin film materials, in particular to a CuInS 2 Thin film and its preparation process. 【Background technique】 [0002] CuInS 2 It is a group I-III-IV direct bandgap semiconductor compound. It has a high light absorption coefficient (10 5 cm -1 ), the bandgap width (1.50eV) is closer to the optimal bandgap width (1.45eV) required by the solar cell, the corresponding photovoltaic device has no light decay effect, and the theoretical value of the photoelectric conversion rate reaches 28-32%. Therefore CuInS 2 It is one of the most promising materials for the light absorbing layer of thin film solar cells. [0003] CuInS 2 There are many methods for preparing thin films, including vulcanization method, vacuum multiple evaporation method, atomic layer deposition method, spray pyrolysis method, radio frequency sputtering method, molecular beam epitaxy method, ion layer gas phase reaction method, chemic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C25D9/04C25D3/02
CPCC25D3/02C25D9/04
Inventor 卢琳王艳杰刘天成刘迎春张达威李晓刚
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap