Method of testing contact resistivity of passivated contact structure

A technology of contact resistivity and contact structure, applied in the field of solar cells, can solve the problems of complex photolithography mask process and RIE process, difficult to manufacture in large quantities, difficult to use, etc., and achieves improved fitting determination coefficient and good accuracy. , the effect of the same path

Pending Publication Date: 2020-08-07
TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD
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Problems solved by technology

Although the above two methods can eliminate the interference of redundant transmission paths and accurately test the contact resistivity, the photolithography mask process and RIE process have the disadvantages of complex process, high cost, time-consuming and difficult to produce samples in large quantities. Difficult to use in

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  • Method of testing contact resistivity of passivated contact structure
  • Method of testing contact resistivity of passivated contact structure
  • Method of testing contact resistivity of passivated contact structure

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Embodiment Construction

[0046] Below in conjunction with example the present invention is described in detail.

[0047] The specific embodiment is only an explanation of the present invention, not a limitation of the present invention. Those skilled in the art can make modifications without creative contribution to the present embodiment as required after reading this description, but as long as they are within the scope of the claims of the present invention inside are protected.

[0048] A kind of method for testing the contact resistivity of passivation contact structure of the present invention, its technical scheme is: comprise the following steps:

[0049] (1) Grooving is performed around circular point electrodes with different diameters on the battery sheet to form circular groove structures with different inner diameters; wherein, the circular groove structures extend longitudinally to the inside of the silicon substrate;

[0050] (2), test the inner diameters corresponding to the circular ...

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Abstract

The invention relates to a method of testing the contact resistivity of a passivated contact structure. The method comprises the steps of (1), carrying out the grooving of the peripheries of circularpoint-shaped electrodes with different diameters on a battery piece, and forming circular groove structures with different internal diameters, (2) testing the inner diameters corresponding to the circular groove structures with different inner diameters, (3) testing the corresponding total resistance values between the circular point-shaped electrodes with different diameters and the back metal electrode, and (4) collecting inner diameter data corresponding to different circular groove structures and corresponding total resistance value data between the circular point-shaped electrodes with different diameters and the back metal electrode, drawing a scatter diagram, fitting scatter points by using a current transmission model of which the two ends are in contact, and calculating the contact resistivity. The circular groove structure can block transverse transmission of the current in the passivated contact structure, so that the actual transmission path of the current is more consistent with the theoretical path, and the fitting determination coefficient and the test accuracy can be remarkably improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for testing the contact resistivity of a passivation contact structure. Background technique [0002] Passivation contact structures, such as tunnel oxide layer / doped polysilicon layer, ultra-thin intrinsic amorphous silicon layer / heavily doped amorphous silicon layer, not only have excellent interface passivation performance, can significantly reduce metal contact recombination, but also have excellent Excellent contact performance, which facilitates the efficient transport of majority carriers. The excellent performance of the passivation contact structure has attracted extensive attention from research institutions and enterprises. Research institutions such as Fraunhofer in Germany and ISFH Institute of Solar Energy Systems have developed TOPCon batteries and POLO batteries for tunnel oxide / doped polysilicon layer structures. Enterprises such as China Lai, Tianh...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02S50/10G01R27/08G01R31/389
CPCH02S50/10G01R27/08G01R31/389Y02E10/50
Inventor 包杰陈程黄策乔振聪刘志锋陈嘉林建伟
Owner TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD
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