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A hard x-ray and optoelectronic shielding composite

A composite material and X-ray technology, which is applied in the field of hard X-ray and optoelectronic shielding composite materials, can solve problems such as poor shielding performance of hard X-rays, and achieve the effects of poor shielding performance, reduced impact, and excellent mechanical properties

Active Publication Date: 2022-03-25
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a hard X-ray and optoelectronic shielding composite material to solve the problem of poor shielding performance of existing hard X-ray shielding

Method used

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  • A hard x-ray and optoelectronic shielding composite
  • A hard x-ray and optoelectronic shielding composite
  • A hard x-ray and optoelectronic shielding composite

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Experimental program
Comparison scheme
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Embodiment 1

[0042] like figure 1 As shown, a hard X-ray and optoelectronic shielding composite material includes an X-ray shielding layer and an optoelectronic shielding layer, a single side of the X-ray shielding layer is provided with an optoelectronic shielding layer, and the X-ray shielding layer is made of TaW alloy, The optoelectronic shielding layer adopts B 4 C is made, the thickness of the TaW alloy is 0.3mm, the B 4 The thickness of C is 50 μm, wherein the mass fraction of TaW alloy W is 10%, and the mass fraction of Ta is 90%.

[0043] In this embodiment, the areal density of the TaW alloy is 0.5061g / cm 2 , the bulk density is 16.87g / cm 3 , the thermal conductivity is 47W / (m×K), and the thermal expansion coefficient is 5×10 -6 / K, tensile strength R m 830MPa, yield strength R p0.2 840MPa, elongation A is 10%; the B 4 The thermal conductivity of C is 0.68~0.9W / (m×K), and the thermal expansion coefficient is 3.56×10 -6 / K(0~100℃)

[0044] The shielding effect of this ...

Embodiment 2

[0047] This embodiment is based on Embodiment 1, and the difference from Embodiment 1 is:

[0048] The thickness of the TaW alloy is 0.5mm, the B 4 The thickness of C is 100 μm.

[0049] In this embodiment, the areal density of the TaW alloy is 0.8435g / cm 2 , the bulk density is 16.87g / cm 3 , the thermal conductivity is 47W / (m×K), and the thermal expansion coefficient is 5×10 -6 / K, tensile strength R m 830MPa, yield strength R p0.2 840MPa, elongation A is 10%; the B 4 The thermal conductivity of C is 0.68~0.9W / (m×K), and the thermal expansion coefficient is 3.56×10 -6 / K(0~100℃).

[0050] The cross-sectional topography of the shielding composite material in this embodiment is as follows: Figure 5 shown.

[0051] The shielding effect of this embodiment:

[0052] 0.5mmTaW10 shields 94% of X-rays with energy of 60KeV and 99% of X-rays with 40KeV; 100μmB 4 C shields 91% of photoelectrons below 100KeV.

Embodiment 3

[0054] This embodiment is based on Embodiment 1, and the difference from Embodiment 1 is:

[0055] The thickness of the TaW alloy is 0.4 mm, the B 4 The thickness of C is 80 μm.

[0056] In this embodiment, the areal density of the TaW alloy is 0.6748g / cm 2 , the bulk density is 16.87g / cm 3 , the thermal conductivity is 47W / (m×K), and the thermal expansion coefficient is 5×10 -6 / K, tensile strength R m 830MPa, yield strength R p0.2 840MPa, elongation A is 10%; the B 4 The thermal conductivity of C is 0.68~0.9W / (m×K), and the thermal expansion coefficient is 3.56×10 -6 / K(0~100℃)

[0057] The shielding effect of this embodiment:

[0058] 0.4mmTaW10 shields 90% of X-rays with energy of 60KeV and 99% of X-rays with 40KeV; 80μmB 4 C shields 85% of photoelectrons below 100KeV.

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Abstract

The invention discloses a hard X-ray and photoelectron shielding composite material, which comprises an X-ray shielding layer and a photoelectron shielding layer. The X-ray shielding layer is provided with a photoelectron shielding layer on both sides or on one side. The X-ray shielding layer adopts high Z material, and the optoelectronic shielding layer is made of low Z material. The present invention uses a laminated functional composite material composed of high-Z materials and low-Z materials, which can not only effectively shield X-rays, but also effectively shield photoelectrons, reduce the impact of photoelectrons on electronic equipment, and solve the problem of existing hard X-ray shielding Problems with poor shielding performance.

Description

technical field [0001] The invention relates to the technical field of hard X-ray shielding, in particular to a hard X-ray and optoelectronic shielding composite material. Background technique [0002] The X-ray radiation environment will cause ionization damage to electronic devices and systems, which will cause the failure of electronic circuits and lead to the paralysis of the entire system. Therefore, X-ray shielding materials are required to shield X-rays to reduce ionization damage to electronic devices and systems. [0003] Existing X-ray shielding materials mainly use high atomic number metal materials (high Z metal materials), such as lead and tungsten-containing materials, for anti-hard X-ray shielding to reduce the total ionization dose on devices in the system. [0004] However, the existing X-ray shielding materials have poor shielding efficiency under a certain weight limit. At the same time, when X-rays pass through the metal shielding materials, a large numb...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G21F1/08G21F1/12C22C27/02
CPCG21F1/125G21F1/085C22C27/02
Inventor 朱小锋刘珉强赵洪超许献国周开明王艳
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS