Ytterbium ion doped abgs crystal and self frequency doubling ultrashort pulse laser
A technology of ultra-short pulse and ytterbium ions, which is applied in the direction of lasers, phonon exciters, laser components, etc., can solve the problems that self-frequency doubling crystals have not made breakthroughs, and achieve easy industrial application, wide emission bandwidth, and reduced cavity The effect of internal loss
Active Publication Date: 2021-07-23
SHANDONG UNIV
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Problems solved by technology
[0008] At present, no ideal crystal material that can satisfy the above conditions at the same time has been found in the prior art. Due to the limitation of crystal materials, self-frequency doubling crystals have not made breakthroughs in the field of all-solid-state pulsed lasers in the visible band.
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Embodiment 1
[0048] Self-frequency doubling laser crystal, the self-frequency doubling laser crystal is ytterbium ion doped Ca 3 NbGa 3 Si 2 o 14 Crystal, referred to as Yb: CNGS, the doping concentration of ytterbium ions is 0.1 at.%.
Embodiment 2
[0050] Self-frequency doubling laser crystal, the self-frequency doubling laser crystal is ytterbium ion doped Ca 3 NbGa 3 Si 2 o 14 The crystal, referred to as Yb:CNGS, has a ytterbium ion doping concentration of 50.0 at.%.
Embodiment 3
[0052] Self-frequency doubling laser crystal, the self-frequency doubling laser crystal is ytterbium ion doped Ca 3 NbGa 3 Si 2 o 14 The crystal, referred to as Yb:CNGS, has a doping concentration of ytterbium ions of 5 at.%.
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Abstract
The invention relates to ytterbium ion-doped ABGS crystal and a self-frequency-multiplied ultrashort pulse laser, which includes a semiconductor laser pump source arranged along the optical path, a focusing system, and a first cavity mirror M 1 , self-frequency doubling laser crystal, second cavity mirror M 2 , GTI mirror, third cavity mirror M 3 , the fourth cavity mirror M 4 , saturable absorber; the self-frequency doubling laser crystal is doped with ytterbium ions A 3 B Ga 3 Si 2 o 14 Crystal, A=Ca or Sr, B=Nb or Ta. The crystal has laser emission and nonlinear optical effects at the same time, and uses a self-frequency doubling crystal to achieve ultrashort pulse self-frequency doubling green light output through mode-locking technology. The invention has low cost, and adopts one self-frequency doubling laser crystal to replace two crystals, a laser crystal and a nonlinear crystal, greatly reduces the production cost, simplifies the processing and assembly links, and improves the production efficiency.
Description
technical field [0001] The invention relates to a passive mode-locked self-frequency doubling ultrashort pulse laser, especially based on ytterbium ion doping A 3 B Ga 3 Si 2 o 14 A self-frequency doubling laser of (A=Ca, Sr; B=Nb, Ta) crystal belongs to the field of laser technology, and relates to laser and nonlinear crystal devices. Background technique [0002] Visible band (380nm-760nm) pulsed laser, especially ultrashort pulse laser (picosecond, femtosecond level) is an important technical means to study ultrafast phenomena in the objective world, and is widely used in micro-nano processing, optical detection, military defense and other fields. For example, for unknown personnel entering military restricted areas during wartime, the use of green (~532nm) pulsed lasers can temporarily blind the intruders and stop their actions. The pulsed laser light source of this wavelength can achieve effective but harmless area defense. At present, the more common way to obtain...
Claims
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IPC IPC(8): H01S3/109H01S3/16
CPCH01S3/1095H01S3/1618H01S3/1655
Inventor 张栩朝郭世义王正平许心光
Owner SHANDONG UNIV




