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Single-peak high-temperature heating furnace for PN junction diffusion or passivation and application

A technology of heating furnace and PN junction, which is applied in the field of heating furnace and heating, with single-peak high-temperature heating furnace and heating, which can solve the problems that affect the consistency of product electrical parameters, the difference of electrical parameter sheets, and the difficulty of glass film forming, etc. , to achieve the same heating conditions, increase the quantity, reduce the deformation and fragmentation of silicon wafers

Pending Publication Date: 2020-08-21
捷捷半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The operation method of this diffusion furnace is relatively simple, and the workmanship of the furnace body is simple. However, when it is necessary to achieve rapid temperature rise and diffusion, it needs to be operated in batches. The diffusion consistency between the furnace mouth and the furnace tail is poor, and there are large differences in electrical parameters.
[0004] During the glass passivation sintering and cooling process, the faster the cooling rate from the flow temperature point of the glass powder to the softening temperature point, the smaller the microcrystal diameter, the faster the glass stress disappears, which can reduce the deformation and fragmentation of silicon wafers, and improve the consistency of product sintering point characteristics The current glass passivation sintering furnace, due to its large heat capacity and slow cooling speed, is not easy to form the glass film, and the single point of entry and exit of the product leads to the situation that the product is first in and last out, which affects the consistency of the product's electrical parameters

Method used

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  • Single-peak high-temperature heating furnace for PN junction diffusion or passivation and application
  • Single-peak high-temperature heating furnace for PN junction diffusion or passivation and application

Examples

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Embodiment 1

[0038] This embodiment provides a single-peak high-temperature heating furnace, which has such figure 1 In the shown structure, the main body of the heating furnace is the furnace tube 3, the quartz cap 1 is connected to the furnace tube 3 (quartz tube) by frosting, the inside of the furnace tube 3 is provided with a quartz boat 4, and five sections are arranged along the length direction of the furnace tube Heating wire 2, wherein, the first section of heating wire (such as figure 2 The winding interval of the A1 section shown) is 15mm-20mm, and the second section of heating wire (such as figure 2 The winding interval of the B1 section shown) is 10mm-15mm, and the third section of heating wire (such as figure 2 The winding interval of section C shown) is 5mm-10mm, and the fourth section of heating wire (such as figure 2 The winding interval of the B2 section shown) is 10mm-15mm, and the fifth section of heating wire (such as figure 2 The winding interval shown in para...

Embodiment 2

[0045] This embodiment provides a figure 1 The passivation method of the PN junction realized by the unimodal high-temperature heating furnace, including:

[0046] Control the temperature of the furnace tube of the heating furnace to realize the gradient distribution of temperature; the temperature of the first section is 400°C-650°C, the temperature of the second section is 550°C-800°C; the temperature of the third section is 700°C-1000 °C; the temperature of the fourth section is 550°C-800°C, and the temperature of the fifth section is 400°C-650°C;

[0047] There are at least 200 pieces of silicon wafers in the quartz boat, and the quartz boat is sent in from the tail of the furnace tube, placed in a non-high temperature area, covered with a quartz cap, and ventilated for 5min-20min;

[0048] Control the movement speed of the quartz boat, move the quartz boat to the furnace mouth of the furnace tube, and complete the passivation operation.

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Abstract

The invention provides a single-peak high-temperature heating furnace for PN junction diffusion or passivation and application. The heating furnace is provided with temperature control equipment, a heating furnace main body is a furnace tube, one end of the furnace tube is a silicon wafer inlet, the other end is a silicon wafer outlet, the silicon wafer inlet end and outlet end of the furnace tubeare low-temperature areas, and the middle is a high-temperature area. The single-peak high-temperature heating furnace for PN junction diffusion or passivation can be used for diffusion and passivation of silicon wafers. Diffusion and passivation achieved through the heating furnace improve the consistency of a sintering process of multiple silicon wafers entering and exiting the furnace, and theconsistency of characteristic parameters is improved.

Description

technical field [0001] The invention relates to a heating furnace and a heating method, in particular to a single-peak high-temperature heating furnace and a heating method for PN junction diffusion or passivation, and belongs to the technical field of PN junction preparation. Background technique [0002] The diffusion process and passivation are particularly critical processes in the manufacture of semiconductor devices, which determine the uniformity and controllability of the PN junction. [0003] The existing diffusion process is generally carried out in a diffusion furnace, which is a closed heating chamber with a heating wire wound on the surface. The heating wire of the existing diffusion furnace is evenly wound, and the product enters and exits in one direction. The operation method of this diffusion furnace is relatively simple, and the workmanship of the furnace body is simple. However, when it is necessary to achieve rapid temperature rise and diffusion, it need...

Claims

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Application Information

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IPC IPC(8): H01L21/67H01L21/56H01L21/225
CPCH01L21/67109H01L21/225H01L21/56
Inventor 沈怡东欧阳潇王成森
Owner 捷捷半导体有限公司