DRAM

Abstract

The invention discloses a semiconductor structure, comprising a substrate, a plurality of contact structures located on the substrate, a group of first patterns located above the contact structures, wherein the first patterns include a plurality of first curves pattern, and a group of second patterns are located on the same plane as the first pattern, wherein the second pattern includes a plurality of second curved patterns, wherein viewed from a top view, the plurality of first curved patterns and The plurality of second curve patterns intersect each other.

Description

technical field [0001] The invention relates to a semiconductor structure, in particular to a dynamic random access memory structure with a kite-shaped storage point contact pad. Background technique [0002] Due to the development of semiconductor devices toward high density, the size of the device within the unit area is continuously reduced. Semiconductor components are widely used in the electronics industry due to their small size, versatility and / or low manufacturing costs. Semiconductor components are classified into semiconductor components that store logic data, semiconductor logic components that operate and process logic data operations, or hybrid semiconductor components that have both the functions of semiconductor storage components and the functions of semiconductor logic components and / or other semiconductor components. [0003] The semiconductor assembly may generally include vertically stacked patterns, and contact plugs that electrically connect the stack...

AI Technical Summary

Problems solved by technology

Parasitic capacitance may lead to performance degradation of semiconductor components (e.g., reduced operating speed)

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